| A III–V nanowire channel on silicon for high-performance vertical transistors K Tomioka, M Yoshimura, T Fukui Nature 488 (7410), 189-192, 2012 | 824 | 2012 |
| Control of InAs nanowire growth directions on Si K Tomioka, J Motohisa, S Hara, T Fukui Nano letters 8 (10), 3475-3480, 2008 | 454 | 2008 |
| GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui Nano letters 10 (5), 1639-1644, 2010 | 404 | 2010 |
| Growth of core–shell InP nanowires for photovoltaic application by selective-area metal organic vapor phase epitaxy H Goto, K Nosaki, K Tomioka, S Hara, K Hiruma, J Motohisa, T Fukui Applied Physics Express 2 (3), 035004, 2009 | 303 | 2009 |
| Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si (111) substrate K Tomioka, Y Kobayashi, J Motohisa, S Hara, T Fukui Nanotechnology 20 (14), 145302, 2009 | 213 | 2009 |
| III–V nanowires on Si substrate: selective-area growth and device applications K Tomioka, T Tanaka, S Hara, K Hiruma, T Fukui IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 1112-1129, 2010 | 200 | 2010 |
| Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction K Tomioka, M Yoshimura, T Fukui 2012 symposium on VLSI technology (VLSIT), 47-48, 2012 | 195 | 2012 |
| Growth of highly uniform InAs nanowire arrays by selective-area MOVPE K Tomioka, P Mohan, J Noborisaka, S Hara, J Motohisa, T Fukui Journal of Crystal Growth 298, 644-647, 2007 | 174 | 2007 |
| Selective-area growth of III-V nanowires and their applications K Tomioka, K Ikejiri, T Tanaka, J Motohisa, S Hara, K Hiruma, T Fukui Journal of Materials Research 26 (17), 2127-2141, 2011 | 158 | 2011 |
| Tunnel field-effect transistor using InAs nanowire/Si heterojunction K Tomioka, T Fukui Applied Physics Letters 98 (8), 2011 | 151 | 2011 |
| Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates T Tanaka, K Tomioka, S Hara, J Motohisa, E Sano, T Fukui Applied physics express 3 (2), 025003, 2010 | 138 | 2010 |
| Structural transition in indium phosphide nanowires Y Kitauchi, Y Kobayashi, K Tomioka, S Hara, K Hiruma, T Fukui, ... Nano letters 10 (5), 1699-1703, 2010 | 131 | 2010 |
| Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires K Ikejiri, Y Kitauchi, K Tomioka, J Motohisa, T Fukui Nano letters 11 (10), 4314-4318, 2011 | 121 | 2011 |
| Sub 60 mV/decade switch using an InAs nanowire–Si heterojunction and turn-on voltage shift with a pulsed doping technique K Tomioka, M Yoshimura, T Fukui Nano letters 13 (12), 5822-5826, 2013 | 99 | 2013 |
| Crystallographic structure of InAs nanowires studied by transmission electron microscopy K Tomioka, J Motohisa, S Hara, T Fukui Japanese Journal of Applied Physics 46 (12L), L1102, 2007 | 73 | 2007 |
| Position controlled nanowires for infrared single photon emission SN Dorenbos, H Sasakura, MP Van Kouwen, N Akopian, S Adachi, ... Applied Physics Letters 97 (17), 2010 | 67 | 2010 |
| Indium phosphide core–shell nanowire array solar cells with lattice-mismatched window layer M Yoshimura, E Nakai, K Tomioka, T Fukui Applied Physics Express 6 (5), 052301, 2013 | 64 | 2013 |
| Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length K Tomioka, T Fukui Applied Physics Letters 104 (7), 2014 | 59 | 2014 |
| GaAs/InGaP core–multishell nanowire-array-based solar cells E Nakai, M Yoshimura, K Tomioka, T Fukui Japanese Journal of Applied Physics 52 (5R), 055002, 2013 | 57 | 2013 |
| Position-controlled III–V compound semiconductor nanowire solar cells by selective-area metal–organic vapor phase epitaxy T Fukui, M Yoshimura, E Nakai, K Tomioka Ambio 41, 119-124, 2012 | 57 | 2012 |
Keitaro Ikejiri確認したメール アドレス: tn-sanso.co.jp
