IKHTIAR
IKHTIAR
Samsung Semiconductor Inc. (Samsung DSA)
確認したメール アドレス: samsung.com
タイトル
引用先
引用先
Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer
KH S. Kasai, Y. K. Takahashi, P. -H. Cheng, Ikhtiar, T. Furubayashi, K ...
Applied Physics Letters 109 (3), 032409, 2016
312016
Magneto-transport and microstructure of Co2Fe(Ga0.5Ge0.5)/Cu lateral spin valves prepared by top-down microfabrication process
Ikhtiar, S Kasai, A Itoh, YK Takahashi, T Ohkubo, S Mitani, K Hono
Journal of Applied Physics 115 (17), 173912, 2014
292014
Temperature dependence of magneto-transport properties in Co2Fe(Ga0.5Ge0.5)/Cu lateral spin valves
Ikhtiar, S Kasai, YK Takahashi, T Furubayashi, S Mitani, K Hono
Applied Physics Letters 108 (6), 062401, 2016
72016
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers
Ikhtiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
Applied Physics Letters 112 (2), 022408, 2018
62018
Magnetic tunnel junctions with a rock-salt-type Mg1−xTixO barrier for low resistance area product
TFKH Ikhtiar, S. Kasai, P.-H. Cheng, T. Ohkubo, Y. K. Takahashi
Applied Physics Letters 108 (24), 242416, 2016
5*2016
Interfacial perpendicular magnetic anisotropy and electric field effect in Ta/CoFeB/Mg1−xTixO heterostructures
Ikhtiar, K Mukaiyama, S Kasai, K Hono
Applied Physics Letters 111 (20), 202407, 2017
32017
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
Hiroaki Sukegawa, Ikhtiar, Shinya Kasai, Kazuhiro Hono, Xu Xiandong
US Patent App. 16/605,418, 2020
1*2020
Hybrid oxide/metal cap layer for boron-free free layer
Ikhtiar, X Tang, M Krounbi
US Patent App. 16/194,248, 2020
2020
Method and system for providing magnetic junctions utilizing metal oxide layer (s)
DK Lee, MT Krounbi, X Tang, G Feng, Ikhtiar
US Patent 10,553,642, 2020
2020
Magneto-resistance element in which i-iii-vi2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin …
S Kasai, Y Takahashi, P Cheng, Ikhtiar, S Mitani, T Ohkubo, K Hono
US Patent App. 16/311,367, 2019
2019
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
Ikhtiar, X Tang, MT Krounbi
US Patent 10,283,701, 2019
2019
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