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IKHTIAR
IKHTIAR
Samsung Semiconductor Inc. (Samsung DSA)
Verified email at samsung.com
Title
Cited by
Cited by
Year
Magneto-transport and microstructure of Co2Fe (Ga0. 5Ge0. 5)/Cu lateral spin valves prepared by top-down microfabrication process
I Ikhtiar, S Kasai, A Itoh, YK Takahashi, T Ohkubo, S Mitani, K Hono
Journal of Applied Physics 115 (17), 2014
472014
Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer
KH S. Kasai, Y. K. Takahashi, P. -H. Cheng, Ikhtiar, T. Furubayashi, K ...
Applied Physics Letters 109 (3), 032409, 2016
412016
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4 (001) based barriers
I Ikhtiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
Applied Physics Letters 112 (2), 2018
232018
Temperature dependence of magneto-transport properties in Co2Fe (Ga0. 5Ge0. 5)/Cu lateral spin valves
I Ikhtiar, S Kasai, YK Takahashi, T Furubayashi, S Mitani, K Hono
Applied Physics Letters 108 (6), 2016
152016
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
Ikhtiar, X Tang, MT Krounbi
US Patent 10,283,701, 2019
112019
Magnetic tunnel junctions with a rock-salt-type Mg1− xTixO barrier for low resistance area product
I Ikhtiar, S Kasai, PH Cheng, T Ohkubo, YK Takahashi, T Furubayashi, ...
Applied Physics Letters 108 (24), 2016
102016
Hybrid oxide/metal cap layer for boron-free free layer
Ikhtiar, X Tang, M Krounbi
US Patent 11,009,570, 2021
52021
Magneto-resistance element in which i-iii-vi2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin …
S Kasai, Y Takahashi, P Cheng, Ikhtiar, S Mitani, T Ohkubo, K Hono
US Patent 11,004,465, 2021
32021
Method and system for providing magnetic junctions utilizing metal oxide layer (s)
DK Lee, MT Krounbi, X Tang, G Feng, Ikhtiar
US Patent 10,553,642, 2020
32020
Interfacial perpendicular magnetic anisotropy and electric field effect in Ta/CoFeB/Mg1− xTixO heterostructures
I Ikhtiar, K Mukaiyama, S Kasai, K Hono
Applied Physics Letters 111 (20), 2017
22017
Large magnetoresistance effect in magnetic tunnel junctions with a Cu (In0. 8Ga0. 2) Se2 barrier with a low resistance-area product
K Mukaiyama, K Masuda, S Kasai, Y Takahashi, I Ikhtiar, Y Miura, ...
JSAP Annual Meetings Extended Abstracts The 64th JSAP Spring Meeting 2017 …, 2017
12017
Oxide interlayers containing glass-forming agents
Ikhtiar, J JEONG, MT Krounbi, X Tang
US Patent 11,251,366, 2022
2022
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
Hiroaki Sukegawa, Ikhtiar, Shinya Kasai, Kazuhiro Hono, Xu Xiandong
US Patent 11,107,976, 2021
2021
Temperature dependence of magneto-transport properties in Co2Fe (Ga0. 5Ge0. 5)/Cu lateral spin valves
I Ikhtiar, S Kasai, A Itoh, Y Takahashi, T Ohkubo, S Mitani, K Hono
JSAP Annual Meetings Extended Abstracts The 62nd JSAP Spring Meeting 2015 …, 2015
2015
Magneto-transport properties of Co2FeGa0. 5Ge0. 5/Cu lateral spin valve devices
I Ikhtiar, S Kasai, A Itoh, Y Takahashi, T Ohkubo, S Mitani, K Hono
JSAP Annual Meetings Extended Abstracts The 61st JSAP Spring Meeting 2014 …, 2014
2014
Preparation Condition Dependence of Current Perpendicular to Plane Giant Magnetoresistance Devices Using Heusler Alloy Co2Fe0. 4Mn0. 6Si
I Ikhtiar, O Mikihiko, N Hiroshi, A Yasuo
JSAP Annual Meetings Extended Abstracts 第 59 回応用物理学関係連合講演会 …, 2012
2012
Heusler alloy-based lateral spin valves for read head applications in high density hard disk drives
S Kasai, A Itoh, Y Takahashi, T Ohkubo, S Mitani, K Hono
IEICE Technical Report; IEICE Tech. Rep. 114, 0
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Articles 1–17