フォロー
Hannes Mähne
Hannes Mähne
X-FAB Dresden GmbH & Co. KG
確認したメール アドレス: xfab.com
タイトル
引用先
引用先
Nonlinear dynamics of a locally-active memristor
A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015
1872015
Physical model of threshold switching in NbO 2 based memristors
S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ...
RSC advances 5 (124), 102318-102322, 2015
1672015
Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films
H Wylezich, H Mähne, J Rensberg, C Ronning, P Zahn, S Slesazeck, ...
ACS applied materials & interfaces 6 (20), 17474-17480, 2014
572014
Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
H Mähne, L Berger, D Martin, V Klemm, S Slesazeck, S Jakschik, ...
Solid-state electronics 72, 73-77, 2012
492012
The influence of crystallinity on the resistive switching behavior of TiO2
H Mähne, S Slesazeck, S Jakschik, I Dirnstorfer, T Mikolajick
Microelectronic Engineering 88 (7), 1148-1151, 2011
382011
Analog resistive switching behavior of Al/Nb2O5/Al device
H Mähne, H Wylezich, F Hanzig, S Slesazeck, D Rafaja, T Mikolajick
Semiconductor Science and Technology 29 (10), 104002, 2014
372014
Room temperature fabricated NbOx/Nb2O5memory switching device with threshold switching effect
H Mähne, H Wylezich, S Slesazeck, T Mikolajick, J Vesely, V Klemm, ...
2013 5th IEEE International Memory Workshop, 174-177, 2013
362013
Unfolding the local activity of a memristor
A Ascoli, S Slesazeck, R Tetzlaff, H Mähne, T Mikolajick
2014 14th International Workshop on Cellular Nanoscale Networks and their …, 2014
202014
Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal–insulator–metal stacks
F Hanzig, H Mähne, J Veselý, H Wylezich, S Slesazeck, A Leuteritz, ...
Journal of Electron Spectroscopy and Related Phenomena 202, 122-127, 2015
192015
Ferroelectric fets with separated capacitor in the back-end-of-line: Role of the capacitance ratio
D Lehninger, R Hoffmann, A Sünbül, H Mähne, T Kämpfe, K Bernert, ...
IEEE Electron Device Letters 43 (11), 1866-1869, 2022
182022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer
K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
162022
Versatile resistive switching in niobium oxide
T Mikolajick, H Wylezich, H Maehne, S Slesazeck
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 381-384, 2016
162016
Integration of BEoL compatible 1T1C FeFET memory into an established CMOS technology
D Lehninger, H Mähne, T Ali, R Hoffmann, R Olivo, M Lederer, K Mertens, ...
2022 IEEE International Memory Workshop (IMW), 1-4, 2022
152022
Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells
I Dirnstorfer, H Mähne, T Mikolajick, M Knaut, M Albert, K Dubnack
Journal of Vacuum Science & Technology A 31 (1), 2013
142013
Memristive device based on a depletion-type SONOS field effect transistor
N Himmel, M Ziegler, H Mähne, S Thiem, H Winterfeld, H Kohlstedt
Semiconductor Science and Technology 32 (6), 06LT01, 2017
132017
Unfolding the threshold switching behavior of a memristor
S Slesazeck, A Ascoli, H Mähne, R Tetzlaff, T Mikolajick
Nonlinear Dynamics of Electronic Systems: 22nd International Conference …, 2014
122014
Thermally activated crystallization of Nb2O5 grown on Pt electrode
L Berger, H Mähne, V Klemm, A Leuteritz, T Mikolajick, D Rafaja
Applied Physics A 108 (2), 431-437, 2012
122012
RSC Adv. 5, 102318 (2015)
S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ...
11
Multilevel switching characteristics for WOx resistive RAM
WC Chien, KP Chang, YC Chen, EK Lai, H Mahne, YD Yao, P Lin, J Gong, ...
Proc. Tech. Dig. SSDM, 1170-1171, 2008
82008
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
A Sünbül, D Lehninger, M Lederer, H Mähne, R Hoffmann, K Bernert, ...
physica status solidi (a) 220 (7), 2300067, 2023
72023
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