| Metal oxynitride semiconductor containing zinc N Itagaki, T Iwasaki, M Watanabe, T Den US Patent 8,274,078, 2012 | 3581 | 2012 |
| Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device N Itagaki, T Iwasaki, K Hoshino US Patent 8,679,650, 2014 | 3528 | 2014 |
| Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system T Iwasaki, N Itagaki, T Den, H Kumomi, K Nomura, T Kamiya, H Hosono Applied physics letters 90 (24), 2007 | 295 | 2007 |
| Production method of thin film transistor using amorphous oxide semiconductor film N Itagaki, T Den, N Kaji, R Hayashi, M Sano US Patent 8,415,198, 2013 | 176 | 2013 |
| Field-effect transistor T Iwasaki, T Den, N Itagaki US Patent App. 12/064,302, 2009 | 168 | 2009 |
| Field effect transistor and process for production thereof T Iwasaki, N Itagaki US Patent 8,164,090, 2012 | 153 | 2012 |
| Amorphous oxide and field effect transistor N Itagaki, A Goyal, T Iwasaki US Patent 8,212,248, 2012 | 144 | 2012 |
| Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.) K Koga, S Thapanut, T Amano, H Seo, N Itagaki, N Hayashi, M Shiratani Applied Physics Express 9 (1), 016201, 2015 | 121 | 2015 |
| Thin film transistor using an oxide semiconductor and display A Goyal, N Itagaki, T Iwasaki US Patent 8,742,412, 2014 | 111 | 2014 |
| Method for manufacturing thin film transistor N Itagaki, T Iwasaki, T Den US Patent 8,084,307, 2011 | 105 | 2011 |
| Zn–In–O based thin‐film transistors: Compositional dependence N Itagaki, T Iwasaki, H Kumomi, T Den, K Nomura, T Kamiya, H Hosono physica status solidi (a) 205 (8), 1915-1919, 2008 | 96 | 2008 |
| Materials, devices, and circuits of transparent amorphous-oxide semiconductor H Kumomi, S Yaginuma, H Omura, A Goyal, A Sato, M Watanabe, ... Journal of Display Technology 5 (12), 531-540, 2009 | 89 | 2009 |
| Highly conducting and very thin ZnO: Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase N Itagaki, K Kuwahara, K Nakahara, D Yamashita, G Uchida, K Koga, ... Applied physics express 4 (1), 011101, 2010 | 84 | 2010 |
| Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma N Itagaki, S Iwata, K Muta, A Yonesu, S Kawakami, N Ishii, Y Kawai Thin Solid Films 435 (1-2), 259-263, 2003 | 70 | 2003 |
| Model for thickness dependence of mobility and concentration in highly conductive zinc oxide DC Look, KD Leedy, A Kiefer, B Claflin, N Itagaki, K Matsushima, ... Optical Engineering 52 (3), 033801-033801, 2013 | 67 | 2013 |
| Nano-factories in plasma: Present status and outlook M Shiratani, K Koga, S Iwashita, G Uchida, N Itagaki, K Kamataki Journal of Physics D: Applied Physics 44 (17), 174038, 2011 | 59 | 2011 |
| Field effect transistor and display apparatus M Ueda, T Iwasaki, N Itagaki, A Goyal US Patent App. 12/634,319, 2010 | 58 | 2010 |
| Amorphous oxide and field effect transistor N Itagaki, T Iwasaki US Patent 8,188,467, 2012 | 52 | 2012 |
| High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma C Niikura, N Itagaki, M Kondo, Y Kawai, A Matsuda Thin Solid Films 457 (1), 84-89, 2004 | 52 | 2004 |
| Field effect transistor T Iwasaki, N Itagaki US Patent 8,188,471, 2012 | 49 | 2012 |
Masaharu ShirataniKyushu University確認したメール アドレス: ed.kyushu-u.ac.jp
