Naho Itagaki
Naho Itagaki
Kyushu University
確認したメール アドレス: なし
Metal oxynitride semiconductor containing zinc
N Itagaki, T Iwasaki, M Watanabe, T Den
US Patent 8,274,078, 2012
Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
N Itagaki, T Iwasaki, K Hoshino
US Patent 8,679,650, 2014
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system
T Iwasaki, N Itagaki, T Den, H Kumomi, K Nomura, T Kamiya, H Hosono
Applied physics letters 90 (24), 242114, 2007
Production method of thin film transistor using amorphous oxide semiconductor film
N Itagaki, T Den, N Kaji, R Hayashi, M Sano
US Patent 8,415,198, 2013
Field effect transistor and process for production thereof
T Iwasaki, N Itagaki
US Patent 8,164,090, 2012
Field-effect transistor
T Iwasaki, T Den, N Itagaki
US Patent App. 12/064,302, 2009
Amorphous oxide and field effect transistor
N Itagaki, A Goyal, T Iwasaki
US Patent 8,212,248, 2012
Thin film transistor using an oxide semiconductor and display
A Goyal, N Itagaki, T Iwasaki
US Patent 8,742,412, 2014
Zn–In–O based thin‐film transistors: Compositional dependence
N Itagaki, T Iwasaki, H Kumomi, T Den, K Nomura, T Kamiya, H Hosono
physica status solidi (a) 205 (8), 1915-1919, 2008
Method for manufacturing thin film transistor
N Itagaki, T Iwasaki, T Den
US Patent 8,084,307, 2011
Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.)
K Koga, S Thapanut, T Amano, H Seo, N Itagaki, N Hayashi, M Shiratani
Applied Physics Express 9 (1), 016201, 2015
Highly conducting and very thin ZnO: Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase
N Itagaki, K Kuwahara, K Nakahara, D Yamashita, G Uchida, K Koga, ...
Applied physics express 4 (1), 011101, 2010
Materials, devices, and circuits of transparent amorphous-oxide semiconductor
H Kumomi, S Yaginuma, H Omura, A Goyal, A Sato, M Watanabe, ...
Journal of Display Technology 5 (12), 531-540, 2009
Model for thickness dependence of mobility and concentration in highly conductive zinc oxide
DC Look, KD Leedy, A Kiefer, B Claflin, N Itagaki, K Matsushima, ...
Optical Engineering 52 (3), 033801, 2013
Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma
N Itagaki, S Iwata, K Muta, A Yonesu, S Kawakami, N Ishii, Y Kawai
Thin Solid Films 435 (1-2), 259-263, 2003
Nano-factories in plasma: present status and outlook
M Shiratani, K Koga, S Iwashita, G Uchida, N Itagaki, K Kamataki
Journal of Physics D: Applied Physics 44 (17), 174038, 2011
High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma
C Niikura, N Itagaki, M Kondo, Y Kawai, A Matsuda
Thin Solid Films 457 (1), 84-89, 2004
Amorphous oxide and field effect transistor
N Itagaki, T Iwasaki
US Patent 8,188,467, 2012
Field effect transistor and display apparatus
M Ueda, T Iwasaki, N Itagaki, A Goyal
US Patent App. 12/634,319, 2010
High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers
K Kuwahara, N Itagaki, K Nakahara, D Yamashita, G Uchida, K Kamataki, ...
Thin Solid Films 520 (14), 4674-4677, 2012
論文 1–20