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Holger von Wenckstern
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引用先
High electron mobility of epitaxial ZnO thin films on -plane sapphire grown by multistep pulsed-laser deposition
EM Kaidashev, M Lorenz, H Von Wenckstern, A Rahm, HC Semmelhack, ...
Applied Physics Letters 82 (22), 3901-3903, 2003
7942003
Cuprous iodide–ap‐type transparent semiconductor: History and novel applications
M Grundmann, FL Schein, M Lorenz, T Böntgen, J Lenzner, ...
physica status solidi (a) 210 (9), 1671-1703, 2013
3292013
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern
Advanced Electronic Materials 3 (9), 1600350, 2017
2182017
Mean barrier height of Pd Schottky contacts on ZnO thin films
H von Wenckstern, G Biehne, RA Rahman, H Hochmuth, M Lorenz, ...
Applied physics letters 88 (9), 2006
1992006
Optical and electrical properties of epitaxial (Mg, Cd) xZn1− xO, ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed laser deposition
M Lorenz, EM Kaidashev, H Von Wenckstern, V Riede, C Bundesmann, ...
Solid-State Electronics 47 (12), 2205-2209, 2003
1972003
Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits
H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 22 (47), 5332-5349, 2010
1852010
Transparent semiconducting oxides: Materials and devices
M Grundmann, H Frenzel, A Lajn, M Lorenz, F Schein, H Von Wenckstern
Physica status solidi (a) 207 (6), 1437-1449, 2010
1802010
Transparent p-CuI/n-ZnO heterojunction diodes
FL Schein, H von Wenckstern, M Grundmann
Applied Physics Letters 102 (9), 2013
1712013
Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
G Brauer, W Anwand, W Skorupa, J Kuriplach, O Melikhova, C Moisson, ...
Physical Review B 74 (4), 045208, 2006
1672006
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 2018
1452018
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
BQ Cao, M Lorenz, A Rahm, H Von Wenckstern, C Czekalla, J Lenzner, ...
Nanotechnology 18 (45), 455707, 2007
1452007
Lateral homogeneity of Schottky contacts on -type ZnO
H Von Wenckstern, EM Kaidashev, M Lorenz, H Hochmuth, G Biehne, ...
Applied physics letters 84 (1), 79-81, 2004
1392004
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
1312014
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition
D Splith, S Müller, F Schmidt, H Von Wenckstern, JJ van Rensburg, ...
physica status solidi (a) 211 (1), 40-47, 2014
1252014
Anionic and cationic substitution in ZnO
H Von Wenckstern, H Schmidt, M Brandt, A Lajn, R Pickenhain, M Lorenz, ...
Progress in Solid State Chemistry 37 (2-3), 153-172, 2009
1172009
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, T Schultz, ...
APL Materials 7 (2), 2019
1142019
ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates
H Frenzel, A Lajn, M Brandt, H Wenckstern, G Biehne, H Hochmuth, ...
Applied Physics Letters 92 (19), 2008
1102008
Control of the conductivity of Si‐doped β‐Ga2O3 thin films via growth temperature and pressure
S Müller, H von Wenckstern, D Splith, F Schmidt, M Grundmann
physica status solidi (a) 211 (1), 34-39, 2014
1092014
Oxide bipolar electronics: materials, devices and circuits
M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ...
Journal of Physics D: Applied Physics 49 (21), 213001, 2016
992016
Lattice parameters and Raman-active phonon modes of β-(AlxGa1− x) 2O3
C Kranert, M Jenderka, J Lenzner, M Lorenz, H Von Wenckstern, ...
Journal of Applied Physics 117 (12), 2015
972015
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論文 1–20