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Amir Zulkefli
Amir Zulkefli
Staff Engineer at Infineon Technologies | Reliability Engineering
Verified email at infineon.com
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Cited by
Cited by
Year
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures
B Mukherjee, A Zulkefli, K Watanabe, T Taniguchi, Y Wakayama, ...
Advanced Functional Materials (Q1, IF: 18.8) 30 (42), 2001688, 2020
592020
Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes
B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai
ACS Photonics (Q1, IF: 7.5) 6 (9), 2277-2286, 2019
302019
Three-dimensional finite element method simulation of perforated graphene Nano-Electro-Mechanical (NEM) switches
MA Zulkefli, MA Mohamed, KS Siow, B Yeop Majlis, J Kulothungan, ...
Micromachines (Q2, IF: 2.9) 8 (8), 236, 2017
202017
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation
A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, ...
ACS Applied Materials & Interfaces (Q1, IF: 9.2) 13 (36), 43030–43038, 2021
182021
Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
Y Shingaya, A Zulkefli, T Iwasaki, R Hayakawa, S Nakaharai, K Watanabe, ...
Advanced Electronic Materials 9 (1), 2200704, 2022
112022
Stress analysis of perforated graphene nano-electro-mechanical (NEM) contact switches by 3D finite element simulation
MA Zulkefli, MA Mohamed, KS Siow, BY Majlis, J Kulothungan, ...
Microsystem Technologies (Q2, IF: 2.3) 24 (2), 1179-1187, 2018
102018
Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors
A Zulkefli, B Mukherjee, R Hayakawa, T Iwasaki, S Nakaharai, ...
Physica Status Solidi (RRL)–Rapid Research Letters (Q1, IF: 2.8) 14 (11 …, 2020
82020
Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors
A Zulkefli, B Mukherjee, T Iwasaki, R Hayakawa, S Nakaharai, ...
Japanese Journal of Applied Physics (Q2, IF: 1.5) 60 (SB), SBBH01, 2021
52021
Optimization of beam length and air gap of suspended graphene NEMS switch for low pull-in voltage application
MA Zulkefli, MA Mohamed, KS Siow, BY Majlis
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 29-32, 2016
32016
Nanoelectromechanical Switch Devices Based on Graphene and Carbon Nanotube (CNT)
MA Zulkefli, MA Mohamed, KS Slow, B YeopMajlis
Sains Malaysiana (Q2, IF: 1.0) 47 (3), 619-633, 2018
12018
Surface Defects Originated Photoresponse Study in hBN-ReS2 FETs
A Zulkefli, MH Johari
2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 25-27, 2023
2023
Evaluation of Cross-Contamination Risk during CMOS Devices Fabrication in an Industrial Silicon Wafer Processing
A Zulkefli, I Umar, V Manaoogaran, W Hidayatulhusna, OG Kai, D Samail, ...
2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 47-49, 2023
2023
Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications
S Nakaharai, T Arakawa, A Zulkefli, T Iwasaki, K Watanabe, T Taniguchi, ...
Applied Physics Letters 122 (26), 2023
2023
Effect of Light Illumination towards Enhanced Selectivity of Volatile Organic Compound Gas Sensor using a Single-Device ReS2 FET
A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, Y Wakayama, ...
2021 International Conference on Solid State Devices and Materials (SSDM2021 …, 2021
2021
Gate-Bias Assisted Humidity Sensor based on ReS2 Field-Effect Transistors
A Zulkefli, B Mukherjee, T Iwasaki, R Hayakawa, S Nakaharai, ...
2020 International Conference on Solid State Devices and Materials (SSDM2020 …, 2020
2020
Role of Traps in Few Layer n-ReS2 Phototransistor on top of p-MoTe2 Layer
B Mukherjee, A Zulkefli, K Ueno, Y Wakayama, S Nakaharai
The 79th JSAP Autumn Meeting 21 (21p-PB3-4), 2018
2018
Charge Trapping and Hysteresis Behavior in ReS2/SiO2 and ReS2/hBN Field Effect Transistors
A Zulkefli, B Mukherjee, K Watanabe, T Taniguchi, Y Wakayama, ...
The 79th JSAP Autumn Meeting 21 (21p-PB3-5), 2018
2018
Few-Layer ReS2 based Vertical pn van der Waals Junction for Photosensing
B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai
2018 International Conference on Solid State Devices and Materials (SSDM2018 …, 2018
2018
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