フォロー
SB Zhang (Shengbai Zhang)
SB Zhang (Shengbai Zhang)
確認したメール アドレス: rpi.edu - ホームページ
タイトル
引用先
引用先
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
SB Zhang, SH Wei, A Zunger
Physical Review B 63 (7), 075205, 2001
22622001
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
SB Zhang, JE Northrup
Physical review letters 67 (17), 2339, 1991
16291991
Defect physics of the chalcopyrite semiconductor
SB Zhang, SH Wei, A Zunger, H Katayama-Yoshida
Physical Review B 57 (16), 9642, 1998
16161998
Origin of p-type doping difficulty in ZnO: The impurity perspective
CH Park, SB Zhang, SH Wei
Physical Review B 66 (7), 073202, 2002
15182002
MoS2 Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties
Y Li, Z Zhou, S Zhang, Z Chen
Journal of the American Chemical Society 130 (49), 16739-16744, 2008
9062008
Hydrogen storage in novel organometallic buckyballs
Y Zhao, YH Kim, AC Dillon, MJ Heben, SB Zhang
Physical review letters 94 (15), 155504, 2005
7742005
Doping by large-size-mismatched impurities: the microscopic origin of arsenic-or antimony-doped p-type zinc oxide
S Limpijumnong, SB Zhang, SH Wei, CH Park
Physical review letters 92 (15), 155504, 2004
7552004
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
SH Wei, SB Zhang
Physical Review B 66 (15), 155211, 2002
6932002
Effects of Ga addition to on its electronic, structural, and defect properties
SH Wei, SB Zhang, A Zunger
Applied physics letters 72 (24), 3199-3201, 1998
6261998
Evidence for Native-Defect Donors in -Type ZnO
DC Look, GC Farlow, P Reunchan, S Limpijumnong, SB Zhang, ...
Physical review letters 95 (22), 225502, 2005
5882005
A phenomenological model for systematization and prediction of doping limits in II–VI and compounds
SB Zhang, SH Wei, A Zunger
Journal of Applied Physics 83 (6), 3192-3196, 1998
5251998
Control of Doping by Impurity Chemical Potentials: Predictions for -Type ZnO
Y Yan, SB Zhang, ST Pantelides
Physical Review Letters 86 (25), 5723, 2001
5092001
First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
SH Wei, SB Zhang, A Zunger
Journal of applied Physics 87 (3), 1304-1311, 2000
5072000
Graphene oxide: A promising nanomaterial for energy and environmental applications
F Li, X Jiang, J Zhao, S Zhang
Nano energy 16, 488-515, 2015
4702015
Effects of Na on the electrical and structural properties of
SH Wei, SB Zhang, A Zunger
Journal of Applied Physics 85 (10), 7214-7218, 1999
4321999
Spontaneous assembly of perfectly ordered identical-size nanocluster arrays
JL Li, JF Jia, XJ Liang, X Liu, JZ Wang, QK Xue, ZQ Li, ST John, Z Zhang, ...
Physical review letters 88 (6), 066101, 2002
4152002
First-principles study of native defects in anatase Ti O 2
S Na-Phattalung, MF Smith, K Kim, MH Du, SH Wei, SB Zhang, ...
Physical Review B 73 (12), 125205, 2006
4122006
Strong Covalency-Induced Recombination Centers in Perovskite Solar Cell Material CH3NH3PbI3
ML Agiorgousis, YY Sun, H Zeng, S Zhang
Journal of the American Chemical Society 136 (41), 14570-14575, 2014
4112014
Stabilization of ternary compounds via ordered arrays of defect pairs
SB Zhang, SH Wei, A Zunger
Physical review letters 78 (21), 4059, 1997
4041997
Graphene oxide as an ideal substrate for hydrogen storage
L Wang, K Lee, YY Sun, M Lucking, Z Chen, JJ Zhao, SB Zhang
ACS nano 3 (10), 2995-3000, 2009
3752009
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論文 1–20