| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 518 | 2008 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 311 | 2004 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 289 | 2013 |
| A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008 | 257 | 2008 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 240 | 2009 |
| Deep-level characterization in GaN HEMTs-part I: advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 198 | 2013 |
| Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 173 | 2008 |
| Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006 | 156 | 2006 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 140 | 2018 |
| Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008 | 124 | 2008 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 033505, 2012 | 113 | 2012 |
| Performance degradation of high-brightness light emitting diodes under DC and pulsed bias S Buso, G Spiazzi, M Meneghini, G Meneghesso IEEE Transactions on Device and Materials Reliability 8 (2), 312-322, 2008 | 110 | 2008 |
| Analysis of a high-power-factor electronic ballast for high brightness light emitting diodes G Spiazzi, S Buso, G Meneghesso 2005 IEEE 36th Power Electronics Specialists Conference, 1494-1499, 2005 | 110 | 2005 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 114508, 2009 | 101 | 2009 |
| Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing E Zanoni, F Danesin, M Meneghini, A Cetronio, C Lanzieri, M Peroni, ... IEEE Electron Device Letters 30 (5), 427-429, 2009 | 101 | 2009 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 100 | 2013 |
| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE Transactions on electron devices 58 (9), 2996-3003, 2011 | 100 | 2011 |
| Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008 | 98 | 2008 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 96 | 2010 |
| On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness G Meneghesso, A Neviani, R Oesterholt, M Matloubian, T Liu, JJ Brown, ... IEEE transactions on electron devices 46 (1), 2-9, 1999 | 96 | 1999 |
Enrico ZanoniProfessor, Electronics, University of Padova確認したメール アドレス: dei.unipd.it