| Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan Applied Physics Express 9 (8), 086501, 2016 | 52 | 2016 |
| A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers S Bao, Y Wang, K Lina, L Zhang, B Wang, WA Sasangka, KEK Lee, ... Journal of Semiconductors 42 (2), 023106, 2021 | 48 | 2021 |
| Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics B Dong, X Luo, S Zhu, M Li, D Hasan, L Zhang, SJ Chua, J Wei, Y Chang, ... Optics Letters 44 (1), 73-76, 2019 | 46 | 2019 |
| Metalorganic Chemical Vapour Deposition (MOCVD) Growth of GaN on Foundry Compatible 200 mm Si L Zhang, KE Lee, EA Fitzgerald, S Chua Handbook of Solid-State Lighting and LEDs, 571 -615, 2017 | 31* | 2017 |
| MOCVD Growth of GaN on SEMI-spec 200 mm Si L Zhang, KH Lee, IM Riko, CC Huang, A Kadir, K Lee, S Chua, ... Semiconductor Science and Technology 32, 065001, 2017 | 30 | 2017 |
| Solution-grown ZnO films toward transparent and smart dual-color light-emitting diode X Huang, L Zhang, S Wang, D Chi, SJ Chua ACS Applied Materials & Interfaces 8 (24), 15482-15488, 2016 | 26 | 2016 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 25* | 2016 |
| Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process KH Lee, Y Wang, B Wang, L Zhang, WA Sasangka, SC Goh, S Bao, ... IEEE Journal of the Electron Devices Society 6, 571-578, 2017 | 24 | 2017 |
| Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform B Dong, X Luo, S Zhu, T Hu, M Li, D Hasan, L Zhang, SJ Chua, J Wei, ... Optics express 27 (14), 19815-19826, 2019 | 23 | 2019 |
| Crystallographic tilt in GaN-on-Si (111) heterostructures grown by metal–organic chemical vapor deposition HF Liu, L Zhang, SJ Chua, DZ Chi Journal of Materials Science 49, 3305-3313, 2014 | 22 | 2014 |
| Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate A Kadir, S Srivastava, Z Li, KEK Lee, WA Sasangka, S Gradecak, SJ Chua, ... Thin Solid Films 663, 73-78, 2018 | 20 | 2018 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 20 | 2016 |
| Enabling the integrated circuits of the future EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, T Palacios, X Zhou, ... 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 17 | 2015 |
| Characterization of defects generated during constant current InGaN-on-silicon LED operation RI Made, Y Gao, GJ Syaranamual, WA Sasangka, L Zhang, XS Nguyen, ... Microelectronics Reliability, 2017 | 16 | 2017 |
| On-chip optical interconnects using ingan light-emitting diodes integrated with si-cmos B Wang, L Zhang, W Zhang, C Wang, KEK Lee, J Michel, SJ Chua, ... Asia Communications and Photonics Conference, AW4A. 2, 2014 | 16 | 2014 |
| Ultralow-power LED-enabled on-chip optical communication designed in the III-nitride and silicon CMOS process integrated platform W Zhang, L Zhang, B Wang, Z Zhu, KEK Lee, J Michel, C Soo-Jin, LS Peh IEEE Design & Test 31 (5), 36-45, 2014 | 14 | 2014 |
| Unlocking the origin of compositional fluctuations in InGaN light emitting diodes TP Mishra, GJ Syaranamual, Z Deng, JY Chung, L Zhang, SA Goodman, ... Physical Review Materials 5 (2), 024605, 2021 | 13 | 2021 |
| Light-emitting V-pits: An alternative approach toward luminescent indium-rich InGaN quantum dots JY Chung, Z Li, SA Goodman, J So, GJ Syaranamual, TP Mishra, ... ACS Photonics 8 (10), 2853-2860, 2021 | 12 | 2021 |
| Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si (111) substrates JW Ho, L Zhang, Q Wee, AAO Tay, M Heuken, SJ Chua Journal of crystal growth 383, 1-8, 2013 | 12 | 2013 |
| Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers IP Seetoh, CB Soh, L Zhang, KH Patrick Tung, EA Fitzgerald, S Jin Chua Applied Physics Letters 103 (12), 2013 | 12 | 2013 |
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTU確認したメール アドレス: mit.edu
