Ingénieur de Recherche, CNRS-CRHEA, Université Côte d'Azur
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High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
E Frayssinet, W Knap, P Lorenzini, N Grandjean, J Massies, ...
Applied Physics Letters 77 (16), 2551-2553, 2000
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 7, 2002
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
M Asif Khan, JW Yang, W Knap, E Frayssinet, X Hu, G Simin, P Prystawko, ...
Applied Physics Letters 76 (25), 3807-3809, 2000
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
TD Veal, PDC King, SA Hatfield, LR Bailey, CF McConville, B Martel, ...
Applied Physics Letters 93 (20), 202108, 2008
Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption
F Médard, J Zúñiga-Pérez, P Disseix, M Mihailovic, J Leymarie, A Vasson, ...
Physical Review B 79 (12), 125302, 2009
Reduction of stacking faults in (11 ̄2 0) and (11 ̄2 2) GaN films by ELO techniques and benefit on GaN wells emission
Z Bougrioua, M Laügt, P Vennéguès, I Cestier, T Gühne, E Frayssinet, ...
physica status solidi (a) 204 (1), 282-289, 2007
Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si (110)
Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ...
IEEE electron device letters 29 (11), 1187-1189, 2008
Effective factor of two-dimensional electrons in GaN/AlGaN heterojunctions
W Knap, E Frayssinet, ML Sadowski, C Skierbiszewski, D Maude, V Falko, ...
Applied physics letters 75 (20), 3156-3158, 1999
Doping of homoepitaxial GaN layers
P Prystawko, M Leszczynski, B Beaumont, P Gibart, E Frayssinet, W Knap, ...
physica status solidi (b) 210 (2), 437-443, 1998
Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
HPD Schenk, E Frayssinet, A Bavard, D Rondi, Y Cordier, M Kennard
Journal of crystal growth 314 (1), 85-91, 2011
Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
W Knap, E Borovitskaya, MS Shur, L Hsu, W Walukiewicz, E Frayssinet, ...
Applied physics letters 80 (7), 1228-1230, 2002
Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
S Faure, C Brimont, T Guillet, T Bretagnon, B Gil, F Médard, D Lagarde, ...
Applied Physics Letters 95 (12), 121102, 2009
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
M Leszczynski, B Beaumont, E Frayssinet, W Knap, P Prystawko, T Suski, ...
Applied physics letters 75 (9), 1276-1278, 1999
Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy
E Frayssinet, Y Cordier, HPD Schenk, A Bavard
physica status solidi c 8 (5), 1479-1482, 2011
Process for producing an epitaxial layer of gallium nitride
E Frayssinet, B Beaumont, JP Faurie, P Gibart
US Patent 7,118,929, 2006
Process for producing an epitalixal layer of galium nitride
E Frayssinet, B Beaumont, JP Faurie, P Gibart
US Patent 7,560,296, 2009
Response of ultra-low dislocation density GaN photodetectors in the near-and vacuum-ultraviolet
JL Pau, C Rivera, E Munoz, E Calleja, U Schühle, E Frayssinet, ...
Journal of applied physics 95 (12), 8275-8279, 2004
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
E Frayssinet, W Knap, S Krukowski, P Perlin, P Wisniewski, T Suski, ...
Journal of crystal growth 230 (3-4), 442-447, 2001
High-quality 2''bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation …
D Gogova, H Larsson, A Kasic, GR Yazdi, I Ivanov, R Yakimova, ...
Japanese journal of applied physics 44 (3R), 1181, 2005
Imaging and counting threading dislocations in c-oriented epitaxial GaN layers
M Khoury, A Courville, B Poulet, M Teisseire, E Beraudo, MJ Rashid, ...
Semiconductor science and technology 28 (3), 035006, 2013
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