Metamagnetic transition and susceptibility maximum in an itinerant-electron system H Yamada Physical Review B 47 (17), 11211, 1993 | 376 | 1993 |
Electronic structure and magnetic properties of YM2 compounds (M= Mn, Fe, Co and Ni) H Yamada, J Inoue, K Terao, S Kanda, M Shimizu Journal of Physics F: Metal Physics 14 (8), 1943, 1984 | 212 | 1984 |
Optical disk having electronic watermark, reproducing apparatus thereof and copy protecting method using the same H Yamada, H Ando, T Kojima, K Hirayama US Patent 6,490,683, 2002 | 151 | 2002 |
Magnetic properties of the 5f itinerant electron metamagnet UCoAl under high pressure NV Mushnikov, T Goto, K Kamishima, H Yamada, AV Andreev, ... Physical Review B 59 (10), 6877, 1999 | 130 | 1999 |
Electronic structure and magnetic properties of the cubic Laves phase transition metal compounds H Yamada Physica B+ C 149 (1-3), 390-402, 1988 | 126 | 1988 |
Copy protection apparatus and information recording medium used in this copy protection apparatus T Kato, T Kato, K Endoh, H Yamada, N Endoh US Patent 6,301,663, 2001 | 125 | 2001 |
High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate K Iso, H Yamada, H Hirasawa, N Fellows, M Saito, K Fujito, SP DenBaars, ... Japanese Journal of Applied Physics 46 (10L), L960, 2007 | 124 | 2007 |
Operation and charging scheduling of electric buses in a city bus route network T Paul, H Yamada 17th international IEEE conference on intelligent transportation systems …, 2014 | 123 | 2014 |
Itinerant-electron metamagnetism and giant magnetocaloric effect H Yamada, T Goto Physical Review B 68 (18), 184417, 2003 | 109 | 2003 |
Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ... Japanese Journal of Applied Physics 46 (8L), L761, 2007 | 103 | 2007 |
Electronic structure and magnetic properties of the cubic Laves phase compounds ACo2 (A= Sc, Ti, Zr, Lu and Hf) and ScNi2 H Yamada, J Inoue, M Shimizu Journal of Physics F: Metal Physics 15 (1), 169, 1985 | 97 | 1985 |
High mobility CMOS technologies using III–V/Ge channels on Si platform S Takagi, SH Kim, M Yokoyama, R Zhang, N Taoka, Y Urabe, T Yasuda, ... Solid-state electronics 88, 2-8, 2013 | 94 | 2013 |
Experimental investigation of laser induced forward transfer process of metal thin films T Sano, H Yamada, T Nakayama, I Miyamoto Applied surface science 186 (1-4), 221-226, 2002 | 93 | 2002 |
Itinerant-electron metamagnetism and strong pressure dependence of the Curie temperature H Yamada, K Fukamichi, T Goto Physical Review B 65 (2), 024413, 2001 | 90 | 2001 |
Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure H Masui, H Yamada, K Iso, S Nakamura, SP DenBaars Journal of Physics D: Applied Physics 41 (22), 225104, 2008 | 86 | 2008 |
Electronic structure and magnetic properties of the cubic Laves phase compounds AFe2 (A= Zr, Lu and Hf) H Yamada, M Shimizu Journal of Physics F: Metal Physics 16 (8), 1039, 1986 | 86 | 1986 |
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier … M Yokoyama, T Yasuda, H Takagi, N Miyata, Y Urabe, H Ishii, H Yamada, ... Applied Physics Letters 96 (14), 2010 | 84 | 2010 |
Reproduction device for optical disks H Satoh, H Yamada, J Uota US Patent 5,903,531, 1999 | 83 | 1999 |
Compositional dependence of nonpolar m-plane InxGa1-xN/GaN light emitting diodes H Yamada, K Iso, M Saito, H Masui, K Fujito, SP DenBaars, S Nakamura Applied physics express 1 (4), 041101, 2008 | 80 | 2008 |
Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes H Yamada, K Iso, M Saito, K Fujito, SP DenBaars, JS Speck, S Nakamura Japanese Journal of Applied Physics 46 (12L), L1117, 2007 | 78 | 2007 |