| P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) H Amano, M Kito, K Hiramatsu, I Akasaki Japanese journal of applied physics 28 (12A), L2112, 1989 | 3132 | 1989 |
| Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki Journal of crystal growth 98 (1-2), 209-219, 1989 | 1157 | 1989 |
| Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ... Journal of Crystal Growth 221 (1-4), 316-326, 2000 | 550 | 2000 |
| Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED I Akasaki, H Amano, M Kito, K Hiramatsu Journal of luminescence 48, 666-670, 1991 | 498 | 1991 |
| Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki Journal of Crystal Growth 115 (1-4), 628-633, 1991 | 479 | 1991 |
| Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy Y Kato, S Kitamura, K Hiramatsu, N Sawaki Journal of crystal growth 144 (3-4), 133-140, 1994 | 449 | 1994 |
| Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki Thin Solid Films 163, 415-420, 1988 | 421 | 1988 |
| Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy P Hacke, T Detchprohm, K Hiramatsu, N Sawaki Applied physics letters 63 (19), 2676-2678, 1993 | 391 | 1993 |
| The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki Journal of crystal growth 128 (1-4), 391-396, 1993 | 390 | 1993 |
| Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda physica status solidi (a) 176 (1), 535-543, 1999 | 380 | 1999 |
| Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain T Detchprohm, K Hiramatsu, KIK Itoh, IAI Akasaki Japanese journal of applied physics 31 (10B), L1454, 1992 | 367 | 1992 |
| Analysis of deep levels in n‐type GaN by transient capacitance methods P Hacke, T Detchprohm, K Hiramatsu, N Sawaki, K Tadatomo, K Miyake Journal of Applied Physics 76 (1), 304-309, 1994 | 359 | 1994 |
| Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer T Detchprohm, K Hiramatsu, H Amano, I Akasaki Applied physics letters 61 (22), 2688-2690, 1992 | 341 | 1992 |
| Process of vapor growth of gallium nitride and its apparatus K Manabe, N Okazaki, I Akazaki, K Hiramatsu, H Amano US Patent 4,911,102, 1990 | 318 | 1990 |
| Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy K Hiramatsu, TD Akasaki Japanese journal of applied physics 32 (4R), 1528, 1993 | 295 | 1993 |
| Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE H Amano, M Kitoh, K Hiramatsu, I Akasaki Journal of the Electrochemical Society 137 (5), 1639, 1990 | 292 | 1990 |
| Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing H Miyake, CH Lin, K Tokoro, K Hiramatsu Journal of Crystal Growth 456, 155-159, 2016 | 288 | 2016 |
| Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer T Takeuchi, H Amano, K Hiramatsu, N Sawaki, I Akasaki Journal of crystal growth 115 (1-4), 634-638, 1991 | 266 | 1991 |
| Growth of single crystal GaN substrate using hydride vapor phase epitaxy K Naniwae, S Itoh, H Amano, K Itoh, K Hiramatsu, I Akasaki Journal of crystal growth 99 (1-4), 381-384, 1990 | 249 | 1990 |
| Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy S Kitamura, K Hiramatsu, NSN Sawaki Japanese journal of applied physics 34 (9B), L1184, 1995 | 237 | 1995 |
Atsushi Motogaito三重大学 大学院工学研究科 電気電子工学専攻准教授確認したメール アドレス: elec.mie-u.ac.jp
