| Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition J Tatebayashi, M Nishioka, Y Arakawa Applied Physics Letters 78 (22), 3469-3471, 2001 | 330 | 2001 |
| Room-temperature lasing in a single nanowire with quantum dots J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa Nature Photonics 9 (8), 501-505, 2015 | 149 | 2015 |
| Size, shape, and strain dependence of the g factor in self-assembled In (Ga) As quantum dots T Nakaoka, T Saito, J Tatebayashi, Y Arakawa Physical Review B 70 (23), 235337, 2004 | 142 | 2004 |
| III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 161104, 2006 | 105 | 2006 |
| Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa Acs Photonics 2 (1), 165-171, 2015 | 94 | 2015 |
| lasing from stacked quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ... Applied Physics Letters 86 (5), 053107, 2005 | 78 | 2005 |
| Narrow photoluminescence linewidth from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor … T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa Applied physics letters 84 (15), 2817-2819, 2004 | 76 | 2004 |
| Lasing characteristics of self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ... Applied Physics Letters 90 (26), 261115, 2007 | 73 | 2007 |
| Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ... Applied physics letters 84 (11), 1820-1822, 2004 | 65 | 2004 |
| A nanowire-based plasmonic quantum dot laser J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa Nano letters 16 (4), 2845-2850, 2016 | 63 | 2016 |
| Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker Applied Physics Letters 90 (18), 183103, 2007 | 63 | 2007 |
| Tuning of g-factor in self-assembled In (Ga) As quantum dots through strain engineering T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ... Physical Review B 71 (20), 205301, 2005 | 62 | 2005 |
| Area-controlled growth of InAs quantum dots and improvement of density and size distribution J Tatebayashi, M Nishioka, T Someya, Y Arakawa Applied Physics Letters 77 (21), 3382-3384, 2000 | 61 | 2000 |
| Formation and optical characteristics of strain-relieved and densely stacked quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ... Applied physics letters 89 (20), 203116, 2006 | 59 | 2006 |
| self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ... Applied physics letters 85 (6), 1024-1026, 2004 | 57 | 2004 |
| Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ... Electronics Letters 39 (15), 1130-1131, 2003 | 55 | 2003 |
| Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker Journal of Physics D: Applied Physics 42 (7), 073002, 2009 | 54 | 2009 |
| Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa Optics express 13 (5), 1615-1620, 2005 | 52 | 2005 |
| Complex emission dynamics of type-II GaSb/GaAs quantum dots K Gradkowski, N Pavarelli, TJ Ochalski, DP Williams, J Tatebayashi, ... Applied Physics Letters 95 (6), 061102, 2009 | 50 | 2009 |
| GaSb/GaAs type-II quantum dots grown by droplet epitaxy B Liang, A Lin, N Pavarelli, C Reyner, J Tatebayashi, K Nunna, J He, ... Nanotechnology 20 (45), 455604, 2009 | 46 | 2009 |
D.L. Huffaker, Diana Huffaker, Diana L...Chair EE department, UT Arlington and Adjunct Professor of Electrical Engineering, UCLAVerified email at uta.edu
