Jun Tatebayashi
Jun Tatebayashi
Verified email at mat.eng.osaka-u.ac.jp
Title
Cited by
Cited by
Year
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
J Tatebayashi, M Nishioka, Y Arakawa
Applied Physics Letters 78 (22), 3469-3471, 2001
3302001
Room-temperature lasing in a single nanowire with quantum dots
J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa
Nature Photonics 9 (8), 501-505, 2015
1492015
Size, shape, and strain dependence of the g factor in self-assembled In (Ga) As quantum dots
T Nakaoka, T Saito, J Tatebayashi, Y Arakawa
Physical Review B 70 (23), 235337, 2004
1422004
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 161104, 2006
1052006
Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser
J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa
Acs Photonics 2 (1), 165-171, 2015
942015
lasing from stacked quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition
J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ...
Applied Physics Letters 86 (5), 053107, 2005
782005
Narrow photoluminescence linewidth from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor …
T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 84 (15), 2817-2819, 2004
762004
Lasing characteristics of self-assembled quantum dots embedded in an InGaAs quantum well
J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ...
Applied Physics Letters 90 (26), 261115, 2007
732007
Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ...
Applied physics letters 84 (11), 1820-1822, 2004
652004
A nanowire-based plasmonic quantum dot laser
J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa
Nano letters 16 (4), 2845-2850, 2016
632016
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker
Applied Physics Letters 90 (18), 183103, 2007
632007
Tuning of g-factor in self-assembled In (Ga) As quantum dots through strain engineering
T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ...
Physical Review B 71 (20), 205301, 2005
622005
Area-controlled growth of InAs quantum dots and improvement of density and size distribution
J Tatebayashi, M Nishioka, T Someya, Y Arakawa
Applied Physics Letters 77 (21), 3382-3384, 2000
612000
Formation and optical characteristics of strain-relieved and densely stacked quantum dots
J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ...
Applied physics letters 89 (20), 203116, 2006
592006
self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots
J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ...
Applied physics letters 85 (6), 1024-1026, 2004
572004
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition
J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ...
Electronics Letters 39 (15), 1130-1131, 2003
552003
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker
Journal of Physics D: Applied Physics 42 (7), 073002, 2009
542009
Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding
T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa
Optics express 13 (5), 1615-1620, 2005
522005
Complex emission dynamics of type-II GaSb/GaAs quantum dots
K Gradkowski, N Pavarelli, TJ Ochalski, DP Williams, J Tatebayashi, ...
Applied Physics Letters 95 (6), 061102, 2009
502009
GaSb/GaAs type-II quantum dots grown by droplet epitaxy
B Liang, A Lin, N Pavarelli, C Reyner, J Tatebayashi, K Nunna, J He, ...
Nanotechnology 20 (45), 455604, 2009
462009
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