| Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures M Sochacki, A Kolendo, J Szmidt, A Werbowy Solid-state electronics 49 (4), 585-590, 2005 | 64 | 2005 |
| A review: Inductively coupled plasma reactive ion etching of silicon carbide K Racka-Szmidt, B Stonio, J Żelazko, M Filipiak, M Sochacki Materials 15 (1), 123, 2021 | 55 | 2021 |
| Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers M Dąbrowska-Szata, M Sochacki, J Szmidt Solid-State Electronics 94, 56-60, 2014 | 47 | 2014 |
| Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC N Kwietniewski, M Sochacki, J Szmidt, M Guziewicz, E Kaminska, ... Applied surface science 254 (24), 8106-8110, 2008 | 32 | 2008 |
| Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts A Taube, J Kaczmarski, R Kruszka, J Grochowski, K Kosiel, ... Solid-State Electronics 111, 12-17, 2015 | 26 | 2015 |
| Influence of annealing on reverse current of 4H–SiC Schottky diodes M Sochacki, J Szmidt, M Bakowski, A Werbowy Diamond and related materials 11 (3-6), 1263-1267, 2002 | 25 | 2002 |
| Ta–Si contacts to n-SiC for high temperatures devices M Guziewicz, A Piotrowska, E Kaminska, K Grasza, R Diduszko, A Stonert, ... Materials Science and Engineering: B 135 (3), 289-293, 2006 | 19 | 2006 |
| Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth K Racka, A Avdonin, M Sochacki, E Tymicki, K Grasza, R Jakieła, ... Journal of Crystal Growth 413, 86-93, 2015 | 18 | 2015 |
| Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy K Grodecki, JA Blaszczyk, W Strupinski, A Wysmolek, R Stępniewski, ... Journal of Applied Physics 111 (11), 2012 | 18 | 2012 |
| Technology and characterization of 4H-SiC pin junctions A Kociubiński, M Duk, M Masłyk, N Kwietniewski, M Sochacki, M Borecki, ... Photonics Applications in Astronomy, Communications, Industry, and High …, 2013 | 17 | 2013 |
| Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures A Domanowska, M Miczek, R Ucka, M Matys, B Adamowicz, J Żywicki, ... Applied surface science 258 (21), 8354-8359, 2012 | 15 | 2012 |
| Modelling and simulation of normally-off AlGaN/GaN MOS-HEMTs A Taube, M Sochacki, J Szmidt, E Kaminska, A Piotrowska International Journal of Electronics and Telecommunications, 2014 | 14 | 2014 |
| Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes M Sochacki, R Lukasiewicz, W Rzodkiewicz, A Werbowy, J Szmidt, ... Diamond and related materials 14 (3-7), 1138-1141, 2005 | 14 | 2005 |
| 3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range A Kociubiński, M Borecki, M Duk, M Sochacki, ML Korwin-Pawlowski Microelectronic Engineering 154, 48-52, 2016 | 13 | 2016 |
| TiAl-based ohmic contacts on p-type SiC M Mysliwiec, M Sochacki, R Kisiel, M Guziewicz, M Wzorek Proceedings of the 2011 34th International Spring Seminar on Electronics …, 2011 | 12 | 2011 |
| Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes A Taube, M Sochacki, N Kwietniewski, A Werbowy, S Gierałtowska, ... Applied Physics Letters 110 (14), 2017 | 11 | 2017 |
| Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique M Sochacki, K Krol, M Waskiewicz, K Racka, J Szmidt Microelectronic Engineering 157, 46-51, 2016 | 11 | 2016 |
| Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes M Sochacki, J Szmidt Thin solid films 446 (1), 106-110, 2004 | 11 | 2004 |
| A comparative analysis of printed circuit drying methods for the reliability of assembly process P Ciszewski, M Sochacki, W Stęplewski, M Kościelski, A Araźna, ... Microelectronics Reliability 129, 114478, 2022 | 10 | 2022 |
| Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures K Król, M Sochacki, A Taube, N Kwietniewski, S Gierałtowska, ... physica status solidi (a) 215 (13), 1700882, 2018 | 10 | 2018 |
