Benjamin Damilano
Benjamin Damilano
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Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
N Grandjean, B Damilano, S Dalmasso, M Leroux, M Laügt, J Massies
Journal of applied physics 86 (7), 3714-3720, 1999
From visible to white light emission by GaN quantum dots on Si (111) substrate
B Damilano, N Grandjean, F Semond, J Massies, M Leroux
Applied physics letters 75 (7), 962-964, 1999
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ...
physica status solidi (a) 188 (2), 501-510, 2001
Metasurface orbital angular momentum holography
H Ren, G Briere, X Fang, P Ni, R Sawant, S Héron, S Chenot, S Vézian, ...
Nature communications 10 (1), 1-8, 2019
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
B Damilano, N Grandjean, C Pernot, J Massies
Japanese Journal of Applied Physics 40 (9A), L918, 2001
Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
B Damilano, N Grandjean, S Dalmasso, J Massies
Applied Physics Letters 75 (24), 3751-3753, 1999
Radiative lifetime of a single electron-hole pair in Ga N∕ Al N quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
GaN grown on Si (111) substrate: From two-dimensional growth to quantum well assessment
F Semond, B Damilano, S Vezian, N Grandjean, M Leroux, J Massies
Applied physics letters 75 (1), 82-84, 1999
Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
S Brochen, J Brault, S Chenot, A Dussaigne, M Leroux, B Damilano
Applied Physics Letters 103 (3), 032102, 2013
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K
B Damilano, N Grandjean, J Massies, L Siozade, J Leymarie
Applied Physics Letters 77 (9), 1268-1270, 2000
Atomic structure of pyramidal defects in Mg-doped GaN
P Vennéguès, M Leroux, S Dalmasso, M Benaissa, P De Mierry, ...
Physical Review B 68 (23), 235214, 2003
Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N Grandjean, B Damilano, J Massies
Journal of Physics: Condensed Matter 13 (32), 6945, 2001
Influence of pressure on the optical properties of In x Ga 1− x N epilayers and quantum structures
P Perlin, I Gorczyca, T Suski, P Wisniewski, S Lepkowski, NE Christensen, ...
Physical Review B 64 (11), 115319, 2001
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S Kalliakos, XB Zhang, T Taliercio, P Lefebvre, B Gil, N Grandjean, ...
Applied physics letters 80 (3), 428-430, 2002
Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q Song, A Baroni, R Sawant, P Ni, V Brandli, S Chenot, S Vézian, ...
Nature communications 11 (1), 1-8, 2020
In surface segregation in InGaN/GaN quantum wells
A Dussaigne, B Damilano, N Grandjean, J Massies
Journal of crystal growth 251 (1-4), 471-475, 2003
Yellow–red emission from (Ga, In) N heterostructures
B Damilano, B Gil
Journal of Physics D: Applied Physics 48 (40), 403001, 2015
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P Lefebvre, T Taliercio, A Morel, J Allègre, M Gallart, B Gil, H Mathieu, ...
Applied Physics Letters 78 (11), 1538-1540, 2001
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F Natali, D Byrne, A Dussaigne, N Grandjean, J Massies, B Damilano
Applied physics letters 82 (4), 499-501, 2003
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