| Impact ionization coefficients of silicon carbide T Hatakeyama, T Watanabe, T Shinohe, K Kojima, K Arai, N Sano Applied physics letters 85 (8), 1380-1382, 2004 | 166 | 2004 |
| Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers H Matsuura, M Komeda, S Kagamihara, H Iwata, R Ishihara, ... Journal of Applied Physics 96 (5), 2708-2715, 2004 | 128 | 2004 |
| High-breakdown-voltage semiconductor device T Hatakeyama, T Shinohe US Patent 6,855,970, 2005 | 117 | 2005 |
| Reverse characteristics of a 4H-SiC Schottky barrier diode T Hatakeyama, T Shinohe Materials Science Forum 389, 1169-1172, 2002 | 114 | 2002 |
| Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements T Hatakeyama, Y Kiuchi, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 10 (4), 046601, 2017 | 113 | 2017 |
| Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC S Kagamihara, H Matsuura, T Hatakeyama, T Watanabe, M Kushibe, ... Journal of applied physics 96 (10), 5601-5606, 2004 | 89 | 2004 |
| Semiconductor device T Hatakeyama, T Shinohe US Patent 7,649,213, 2010 | 77 | 2010 |
| High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology T Mizuno, S Takagi, N Sugiyama, J Koga, T Tezuka, K Usuda, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 77 | 1999 |
| Silicon carbide, v. 2: power devices and sensors P Friedrichs, G Pensl, T Kimoto, L Ley Wiley, 2011 | 65* | 2011 |
| Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC M Sometani, D Okamoto, S Harada, H Ishimori, S Takasu, T Hatakeyama, ... Journal of Applied Physics 117 (2), 2015 | 62 | 2015 |
| Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT Y Yonezawa, T Mizushima, K Takenaka, H Fujisawa, T Kato, S Harada, ... 2013 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2013 | 62 | 2013 |
| High withstand voltage semiconductor device K Kinoshita, T Hatakeyama, T Shinohe US Patent 6,831,345, 2004 | 57 | 2004 |
| Physical models for SiC and their application to device simulations of SiC insulated-gate bipolar transistors T Hatakeyama, K Fukuda, H Okumura IEEE Transactions on Electron Devices 60 (2), 613-621, 2012 | 52 | 2012 |
| Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers M Nagano, H Tsuchida, T Suzuki, T Hatakeyama, J Senzaki, K Fukuda Journal of applied physics 108 (1), 2010 | 52 | 2010 |
| Physical modeling and scaling properties of 4H-SiC power devices T Hatakeyama, J Nishio, C Ota, T Shinohe 2005 International Conference On Simulation of Semiconductor Processes and …, 2005 | 49 | 2005 |
| Measurements of impact ionization coefficients of electrons and holes in 4H‐SiC and their application to device simulation T Hatakeyama physica status solidi (a) 206 (10), 2284-2294, 2009 | 47 | 2009 |
| Guard ring assisted RESURF: A new termination structure providing stable and high breakdown voltage for SiC power devices K Kinoshita, T Hatakeyama, O Takikawa, A Yahata, T Shinohe Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 44 | 2002 |
| Ultralow-loss SiC floating junction Schottky barrier diodes (super-SBDs) J Nishio, C Ota, T Hatakeyama, T Shinohe, K Kojima, SI Nishizawa, ... IEEE transactions on electron devices 55 (8), 1954-1960, 2008 | 42 | 2008 |
| High-breakdown-voltage semiconductor device T Hatakeyama, T Shinohe US Patent 7,026,668, 2006 | 42 | 2006 |
| Semiconductor device C Ota, J Nishio, T Hatakeyama, T Shinohe US Patent 7,777,292, 2010 | 40 | 2010 |
Mitsuru Sometani確認したメール アドレス: aist.go.jp
