| SiC materials-progress, status, and potential roadblocks AR Powell, LB Rowland Proceedings of the IEEE 90 (6), 942-955, 2002 | 298 | 2002 |
| Substrate for tensilely strained semiconductor BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani US Patent 5,461,243, 1995 | 288 | 1995 |
| New approach to the growth of low dislocation relaxed SiGe material AR Powell, SS Iyer, FK LeGoues Applied physics letters 64 (14), 1856-1858, 1994 | 267 | 1994 |
| Production of substrate for tensilely strained semiconductor BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani US Patent 5,759,898, 1998 | 204 | 1998 |
| Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry TE Tiwald, JA Woollam, S Zollner, J Christiansen, RB Gregory, ... Physical Review B 60 (16), 11464, 1999 | 183 | 1999 |
| Surface roughening in ion implanted 4H-silicon carbide MA Capano, S Ryu, JA Cooper, MR Melloch, K Rottner, S Karlsson, ... Journal of Electronic Materials 28, 214-218, 1999 | 183 | 1999 |
| Recent progress in SiC DMOSFETs and JBS diodes at Cree RJ Callanan, A Agarwal, A Burk, M Das, B Hull, F Husna, A Powell, ... 2008 34th Annual Conference of IEEE Industrial Electronics, 2885-2890, 2008 | 129 | 2008 |
| Si1-x-yGexCy growth and properties of the ternary system AR Powell, K Eberl, BA Ek, SS Iyer Journal of crystal growth 127 (1-4), 425-429, 1993 | 114 | 1993 |
| Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers BA Hull, JJ Sumakeris, MJ O'Loughlin, Q Zhang, J Richmond, AR Powell, ... IEEE Transactions on Electron Devices 55 (8), 1864-1870, 2008 | 109 | 2008 |
| High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method JR Jenny, SG Müller, A Powell, VF Tsvetkov, HM Hobgood, RC Glass, ... Journal of electronic materials 31, 366-369, 2002 | 89 | 2002 |
| Bulk crystal growth, epitaxy, and defect reduction in silicon carbide materials for microwave and power devices JJ Sumakeris, JR Jenny, AR Powell MRS bulletin 30 (4), 280-286, 2005 | 84 | 2005 |
| Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices JR Jenny, DP Malta, MR Calus, SG Müller, AR Powell, VF Tsvetkov, ... Materials Science Forum 457, 35-40, 2004 | 83* | 2004 |
| Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere DA Grützmacher, TO Sedgwick, A Powell, M Tejwani, SS Iyer, J Cotte, ... Applied physics letters 63 (18), 2531-2533, 1993 | 83 | 1993 |
| Bulk growth of large area SiC crystals AR Powell, JJ Sumakeris, Y Khlebnikov, MJ Paisley, RT Leonard, ... Materials Science Forum 858, 5-10, 2016 | 77 | 2016 |
| Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields MK Das, JJ Sumakeris, BA Hull, J Richmond, S Krishnaswami, AR Powell Materials Science Forum 483, 965-968, 2005 | 67 | 2005 |
| 100 mm 4HN-SiC wafers with zero micropipe density RT Leonard, Y Khlebnikov, AR Powell, C Basceri, MF Brady, I Khlebnikov, ... Materials Science Forum 600, 7-10, 2009 | 62 | 2009 |
| Formation of β‐SiC nanocrystals by the relaxation of Si1−yCy random alloy layers AR Powell, FK LeGoues, SS Iyer Applied physics letters 64 (3), 324-326, 1994 | 61 | 1994 |
| High-purity semi-insulating 4H-SiC for microwave device applications JR Jenny, DP Malta, SG Müller, AR Powell, VF Tsvetkov, HMD Hobgood, ... Journal of electronic materials 32, 432-436, 2003 | 59 | 2003 |
| Relaxation of SiGe thin films grown on Si/SiO2 substrates FK LeGoues, A Powell, SS Iyer Journal of applied physics 75 (11), 7240-7246, 1994 | 58 | 1994 |
| Three inch silicon carbide wafer with low warp, bow, and TTV A Powell, WH Brixius, RT Leonard, DA McClure, M Laughner US Patent 7,422,634, 2008 | 57 | 2008 |
SUBRAMANIAN S. IYERUniversity of California at Los Angeles,確認したメール アドレス: g.ucla.edu
