| Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy XQ Zhang, S Ganapathy, H Kumano, K Uesugi, I Suemune Journal of applied physics 92 (11), 6813-6818, 2002 | 394 | 2002 |
| Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements K Uesugi, N Morooka, I Suemune Applied Physics Letters 74 (9), 1254-1256, 1999 | 313 | 1999 |
| Growth and characterization of hypothetical zinc-blende ZnO films on GaAs (001) substrates with ZnS buffer layers ABMA Ashrafi, A Ueta, A Avramescu, H Kumano, I Suemune, YW Ok, ... Applied Physics Letters 76 (5), 550-552, 2000 | 310 | 2000 |
| Comment on polarization dependent momentum matrix elements in quantum well lasers M Yamanishi, I Suemune Japanese Journal of Applied Physics 23 (1A), L35, 1984 | 279 | 1984 |
| Extremely wide modulation bandwidth in a low threshold current strained quantum well laser I Suemune, LA Coldren, M Yamanishi, Y Kan Applied physics letters 53 (15), 1378-1380, 1988 | 271 | 1988 |
| Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering T Kuroda, T Mano, N Ha, H Nakajima, H Kumano, B Urbaszek, M Jo, ... Physical Review B 88 (4), 041306, 2013 | 173 | 2013 |
| Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy ABMA Ashrafi, I Suemune, H Kumano, S Tanaka Japanese journal of applied physics 41 (11B), L1281, 2002 | 166 | 2002 |
| Luminescent porous silicon synthesized by visible light irradiation N Noguchi, I Suemune Applied physics letters 62 (12), 1429-1431, 1993 | 163 | 1993 |
| Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs I Suemune, K Uesugi, W Walukiewicz Applied Physics Letters 77 (19), 3021-3023, 2000 | 162 | 2000 |
| Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells I Suemune, LA Coldren IEEE journal of quantum electronics 24 (8), 1778-1790, 1988 | 157 | 1988 |
| Corrections to the expression for gain in GaAs RH Yan, SW Corzine, LA Coldren, I Suemune IEEE journal of quantum electronics 26 (2), 213-216, 1990 | 156 | 1990 |
| Temperature dependence of band gap energies of GaAsN alloys K Uesugi, I Suemune, T Hasegawa, T Akutagawa, T Nakamura Applied Physics Letters 76 (10), 1285-1287, 2000 | 141 | 2000 |
| Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications Y Kan, H Nagai, M Yamanishi, I Suemune IEEE journal of quantum electronics 23 (12), 2167-2180, 1987 | 140 | 1987 |
| Self-ordering of nanofacets on vicinal SiC surfaces H Nakagawa, S Tanaka, I Suemune Physical review letters 91 (22), 226107, 2003 | 139 | 2003 |
| Theoretical study of differential gain in strained quantum well structures I Suemune IEEE journal of quantum electronics 27 (5), 1149-1159, 1991 | 100 | 1991 |
| Quantum mechanical size effect modulation light sources–a new field effect semiconductor laser or light emitting device M Yamanishi, I Suemune Japanese journal of applied physics 22 (1A), L22, 1983 | 99 | 1983 |
| Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer H Ishikawa, I Suemune IEEE photonics technology letters 6 (3), 344-347, 1994 | 76 | 1994 |
| Controllable enhancement of excitonic spontaneous emission by quantum confined Stark effect in GaAs quantum wells embedded in quantum microcavities N Ochi, T Shiotani, M Yamanishi, Y Honda, I Suemune Applied physics letters 58 (24), 2735-2737, 1991 | 75 | 1991 |
| Bandgap energy of GaNAs alloys grown on (001) GaAs by metalorganic molecular beam epitaxy KUK Uesugi, ISI Suemune Japanese journal of applied physics 36 (12A), L1572, 1997 | 73 | 1997 |
| Study of luminescent region in anodized porous silicons by photoluminescence imaging and their microstructures N Noguchi, I Suemune, M Yamanishi, GC Hua, N Otsuka Japanese journal of applied physics 31 (4B), L490, 1992 | 72 | 1992 |
