Alessandro Callegari
Alessandro Callegari
Previous IBM, MIT, Cornell,
確認したメール アドレス: なし
Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
CD Dimitrakopoulos, S Purushothaman, J Kymissis, A Callegari, JM Shaw
Science 283 (5403), 822-824, 1999
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
Liquid crystal alignment on carbonaceous surfaces with orientational order
J Stöhr, MG Samant, J Lüning, AC Callegari, P Chaudhari, JP Doyle, ...
Science 292 (5525), 2299-2302, 2001
Diamond-like carbon films from a hydrocarbon helium plasma
FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ...
US Patent 5,470,661, 1995
Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
LP Buchwalter, AC Callegari, SA Cohen, TO Graham, JP Hummel, ...
US Patent 6,184,121, 2001
A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates
S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006
Methods for forming metal oxide layers with enhanced purity
AC Callegari, FE Doany, EP Gousev, TH Zabel
US Patent 6,395,650, 2002
Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n‐type GaAs
YC Shih, M Murakami, EL Wilkie, AC Callegari
Journal of applied physics 62 (2), 582-590, 1987
Sputter deposition of hydrogenated amorphous carbon film and applications thereof
ED Babich, AC Callegari, FE Doany, S Purushothaman
US Patent 5,830,332, 1998
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
C Cabral Jr, AC Callegari, MA Gribelyuk, PC Jamison, DL Lacey, ...
US Patent 6,982,230, 2006
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
A Callegari, PD Hoh, DA Buchanan, D Lacey
Applied physics letters 54 (4), 332-334, 1989
Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs
M Murakami, KD Childs, JM Baker, A Callegari
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
Method of film deposition, and fabrication of structures
AC Callegari, DA Neumayer
US Patent 6,664,186, 2003
Low temperature thin film transistor fabrication
AC Callegari, CD Dimitrakopoulos, S Purushothaman
US Patent 6,207,472, 2001
Charge trapping in high k gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Digest. International Electron Devices Meeting,, 517-520, 2002
Inversion mode -channel GaAs field effect transistor with high-/metal gate
JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ...
Applied Physics Letters 92 (15), 153508, 2008
CVD tantalum compounds for FET get electrodes
V Narayanan, F McFeely, K Milkove, J Yurkas, M Copel, P Jamison, ...
US Patent App. 10/712,575, 2005
論文 1–20