| Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications JK Huang, J Pu, CL Hsu, MH Chiu, ZY Juang, YH Chang, WH Chang, ... ACS nano 8 (1), 923-930, 2014 | 1168 | 2014 |
| Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics J Pu, Y Yomogida, KK Liu, LJ Li, Y Iwasa, T Takenobu Nano letters 12 (8), 4013-4017, 2012 | 955 | 2012 |
| Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection YH Chang, W Zhang, Y Zhu, Y Han, J Pu, JK Chang, WT Hsu, JK Huang, ... ACS nano 8 (8), 8582-8590, 2014 | 650 | 2014 |
| 2D materials for large‐area flexible thermoelectric devices K Kanahashi, J Pu, T Takenobu Advanced Energy Materials 10 (11), 1902842, 2020 | 197 | 2020 |
| Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration CH Chen, CL Wu, J Pu, MH Chiu, P Kumar, T Takenobu, LJ Li 2D Materials 1 (3), 034001, 2014 | 170 | 2014 |
| Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers. J Pu, K Funahashi, CH Chen, MY Li, LJ Li, T Takenobu Advanced Materials (Deerfield Beach, Fla.) 28 (21), 4111-4119, 2016 | 149 | 2016 |
| Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics J Pu, Y Zhang, Y Wada, J Tse-Wei Wang, LJ Li, Y Iwasa, T Takenobu Applied Physics Letters 103 (2), 2013 | 119 | 2013 |
| Monolayer transition metal dichalcogenides as light sources J Pu, T Takenobu Advanced materials 30 (33), 1707627, 2018 | 112 | 2018 |
| Synthesis of large‐area InSe monolayers by chemical vapor deposition HC Chang, CL Tu, KI Lin, J Pu, T Takenobu, CN Hsiao, CH Chen Small 14 (39), 1802351, 2018 | 111 | 2018 |
| Ambipolar organic single-crystal transistors based on ion gels. Y Yomogida, J Pu, H Shimotani, S Ono, S Hotta, Y Iwasa, T Takenobu Advanced materials (Deerfield Beach, Fla.) 24 (32), 4392-4397, 2012 | 104 | 2012 |
| Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers J Pu, K Kanahashi, NT Cuong, CH Chen, LJ Li, S Okada, H Ohta, ... Physical Review B 94 (1), 014312, 2016 | 99 | 2016 |
| Charge transport in ion-gated mono-, bi- and trilayer MoS2 field effect transistors L Chu, H Schmidt, J Pu, S Wang, B Özyilmaz, T Takenobu, G Eda Scientific reports 4 (1), 7293, 2014 | 90 | 2014 |
| Self‐Aligned and Scalable Growth of Monolayer WSe2–MoS2 Lateral Heterojunctions MY Li, J Pu, JK Huang, Y Miyauchi, K Matsuda, T Takenobu, LJ Li Advanced Functional Materials 28 (17), 1706860, 2018 | 85 | 2018 |
| Flexible and stretchable thin-film transistors based on molybdenum disulphide J Pu, LJ Li, T Takenobu Physical Chemistry Chemical Physics 16 (29), 14996-15006, 2014 | 76 | 2014 |
| Recent Progress on Light‐Emitting Electrochemical Cells with Nonpolymeric Materials K Matsuki, J Pu, T Takenobu Advanced Functional Materials 30 (33), 1908641, 2020 | 54 | 2020 |
| Thermoelectric Detection of Multi-Subband Density of States in Semiconducting and Metallic Single-Walled Carbon Nanotubes. S Shimizu, T Iizuka, K Kanahashi, J Pu, K Yanagi, T Takenobu, Y Iwasa Small (Weinheim an der Bergstrasse, Germany) 12 (25), 3388-3392, 2016 | 54 | 2016 |
| A versatile and simple approach to generate light emission in semiconductors mediated by electric double layers J Pu, T Fujimoto, Y Ohasi, S Kimura, CH Chen, LJ Li, T Sakanoue, ... Advanced Materials 29 (24), 1606918, 2017 | 52 | 2017 |
| Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator Y Kawasugi, K Seki, Y Edagawa, Y Sato, J Pu, T Takenobu, S Yunoki, ... Nature communications 7 (1), 12356, 2016 | 51 | 2016 |
| Efficient and chiral electroluminescence from in‐plane heterostructure of transition metal dichalcogenide monolayers N Wada, J Pu, Y Takaguchi, W Zhang, Z Liu, T Endo, T Irisawa, K Matsuda, ... Advanced Functional Materials 32 (40), 2203602, 2022 | 26 | 2022 |
| Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires HE Lim, Y Nakanishi, Z Liu, J Pu, M Maruyama, T Endo, C Ando, ... Nano Letters 21 (1), 243-249, 2020 | 25 | 2020 |
