フォロー
Toshimasa Matsuoka
Toshimasa Matsuoka
Associate Professor, Osaka University
確認したメール アドレス: eei.eng.osaka-u.ac.jp - ホームページ
タイトル
引用先
引用先
Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS
H Kotaki, S Kakimoto, M Nakano, T Matsuoka, K Adachi, K Sugimoto, ...
Electron Devices Meeting, 1996. IEDM'96., International, 459-462, 1996
1351996
DS-CDMA wired bus with simple interconnection topology for parallel processing system LSIs
R Yoshimura, TB Keat, T Ogawa, S Hatanaka, T Matsuoka, K Taniguchi
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC …, 2000
682000
Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures
T Matsuoka, E Kobayashi, K Taniguchi, C Hamaguchi, S Sasa
Japanese journal of applied physics 29 (10R), 2017, 1990
651990
Hot-carrier-induced degradation of N/sub 2/O-oxynitrided gate oxide NMOSFETs
T Matsuoka, S Taguchi, H Ohtsuka, K Taniguchi, C Hamaguchi, ...
IEEE Transactions on Electron Devices 43 (9), 1364-1373, 1996
451996
Application of noise-enhanced detection of subthreshold signals for communication systems
H Ham, T Matsuoka, K Taniguchi
IEICE transactions on fundamentals of electronics, communications and …, 2009
362009
Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi
Journal of applied physics 78 (5), 3252-3257, 1995
351995
Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure
E Kobayashi, C Hamaguchi, T Matsuoka, K Taniguchi
IEEE Transactions on Electron Devices 36 (10), 2353-2360, 1989
341989
Test structure for precise statistical characteristics measurement of MOSFETs
Y Shimizu, M Nakamura, T Matsuoka, K Taniguchi
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 …, 2002
332002
Zone-folding effect in short-period (GaAs/(AlAs superlattices with n in the range 3–15
T Matsuoka, T Nakazawa, T Ohya, K Taniguchi, C Hamaguchi, H Kato, ...
Physical Review B 43 (14), 11798, 1991
331991
A 0.5 V feedforward delta-sigma modulator with inverter-based integrator
J Wang, T Matsuoka, K Taniguchi
ESSCIRC, 2009. ESSCIRC'09. Proceedings of, 328-331, 2009
302009
Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well
A Shibata, T Matsuoka, S Kakimoto, H Kotaki, M Nakano, K Adachi, ...
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on, 76-77, 1998
281998
Ultralow-power current reference circuit with low temperature dependence
T Hirose, T Matsuoka, K Taniguchi, T Asai, Y Amemiya
IEICE transactions on electronics 88 (6), 1142-1147, 2005
272005
A Biomedical Sensor System with Stochastic A/D Conversion and Error Correction by Machine Learning
Y Hirai, T Matsuoka, S Tani, S Isami, K Tatsumi, M Ueda, T Kamata
IEEE Access, 2019
262019
A 1.0 V, 2.5 mW, transformer noise-canceling UWB CMOS LNA
T Kihara, T Matsuoka, K Taniguchi
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 493-496, 2008
262008
Toward 1Gfps: Evolution of ultra-high-speed image sensors-ISIS, BSI, multi-collection gates, and 3D-stacking
TG Etoh, VTS Dao, K Shimonomura, E Charbon, C Zhang, Y Kamakura, ...
Electron Devices Meeting (IEDM), 2014 IEEE International, 10.3. 1-10.3. 4, 2014
212014
Watch-dog circuit for quality guarantee with subthreshold MOSFET current
T Hirose, R Yoshimura, T Ido, T Matsuoka, K Taniguchi
IEICE transactions on electronics 87 (11), 1910-1914, 2004
212004
Analytical design of a 0.5 V 5GHz CMOS LC-VCO
F Yamashita, T Matsuoka, T Kihara, I Takobe, HJ Park, K Taniguchi
IEICE Electronics Express 6 (14), 1025-1031, 2009
202009
Parallel bus systems using code-division multiple access technique
S Shimizu, T Matsuoka, K Taniguchi
Circuits and Systems, 2003. ISCAS'03. Proceedings of the 2003 International …, 2003
182003
Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Devices for Low-Noise Amplifier
G Kim, B Murakami, M Goto, T Kihara, K Nakamura, Y Shimizu, ...
Japanese journal of applied physics 45 (9R), 6872, 2006
172006
Design of a high‐speed‐sampling stochastic flash analog‐to‐digital converter using device mismatch
H Ham, T Matsuoka, J Wang, K Taniguchi
Electronics and Communications in Japan 96 (1), 51-62, 2013
16*2013
現在システムで処理を実行できません。しばらくしてからもう一度お試しください。
論文 1–20