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Xiao Gong
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Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
2322019
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
Advanced Electronic Materials 5 (12), 1900740, 2019
1812019
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
1152015
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
1152015
Monolithic infrared silicon photonics: the rise of (Si) GeSn semiconductors
O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ...
Applied Physics Letters 118 (11), 2021
1132021
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ...
Optics express 27 (4), 5798-5813, 2019
1112019
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation
X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE Electron Device Letters 34 (3), 339-341, 2013
1042013
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ...
Optics express 25 (14), 15818-15827, 2017
992017
Relaxed and strained patterned germanium-tin structures: a Raman scattering study
R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo
ECS Journal of Solid State Science and Technology 2 (4), P138, 2013
922013
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 Ám
H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ...
Optics express 28 (7), 10280-10293, 2020
862020
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
862015
III–V Multiple-Gate Field-Effect Transistors With High-MobilityChannel and Epi-Controlled Retrograde-Doped Fin
HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo
IEEE Electron Device Letters 32 (2), 146-148, 2010
842010
Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications
Y Li, Y Kang, X Gong
IEEE Transactions on Electron Devices 64 (10), 4317-4321, 2017
832017
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ...
Advanced Electronic Materials 6 (6), 2000057, 2020
802020
An Electronic Synapse Based on 2D Ferroelectric CuInP2S6
B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang
Advanced Electronic Materials 6 (12), 2000760, 2020
742020
Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn)
Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012
712012
Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration
Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo
IEEE Transactions on Electron Devices 60 (12), 4048-4056, 2013
672013
Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution
R Katal, S Masudy-panah, EYJ Kong, ND Khiavi, MHDA Farahani, ...
Catalysis Today 340, 236-244, 2020
662020
New materials for post-Si computing: Ge and GeSn devices
S Gupta, X Gong, R Zhang, YC Yeo, S Takagi, KC Saraswat
MRS Bulletin 39 (8), 678-686, 2014
662014
Lattice-mismatched In0. 4Ga0. 6As Source/Drain stressors with In Situ doping for strained In0. 53 Ga0. 47 as channel n-MOSFETs
HC Chin, X Gong, X Liu, YC Yeo
662009
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