shoso shingubara
shoso shingubara
確認したメール アドレス: kansai-u.ac.jp
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引用先
引用先
Fabrication of nanomaterials using porous alumina templates
S Shingubara
Journal of Nanoparticle Research 5 (1-2), 17-30, 2003
5122003
Synthesis of vertical high‐density epitaxial Si (100) nanowire arrays on a Si (100) substrate using an anodic aluminum oxide template
T Shimizu, T Xie, J Nishikawa, S Shingubara, S Senz, U Gösele
Advanced Materials 19 (7), 917-920, 2007
2022007
Ordered two-dimensional nanowire array formation using self-organized nanoholes of anodically oxidized aluminum
S Shingubara, O Okino, Y Sayama, H Sakaue, T Takahagi
Japanese journal of applied physics 36 (12S), 7791, 1997
1951997
Bottom-up fill of copper in deep submicrometer holes by electroless plating
S Shingubara, Z Wang, O Yaegashi, R Obata, H Sakaue, T Takahagi
Electrochemical and Solid State Letters 7 (6), C78, 2004
1212004
Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte
S Shingubara, K Morimoto, H Sakaue, T Takahagi
Electrochemical and Solid State Letters 7 (3), E15, 2004
1182004
Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum
S Shingubara, O Okino, Y Sayama, H Sakaue, T Takahagi
Solid-State Electronics 43 (6), 1143-1146, 1999
1101999
Electromigration in a single crystalline submicron width aluminum interconnection
S Shingubara, Y Nakasaki, H Kaneko
Applied physics letters 58 (1), 42-44, 1991
1041991
Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating
Z Wang, O Yaegashi, H Sakaue, T Takahagi, S Shingubara
Journal of the Electrochemical society 151 (12), C781, 2004
1002004
Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method
S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
842001
Electromigration‐induced abrupt changes in electrical resistance associated with void dynamics in aluminum interconnections
S Shingubara, H Kaneko, M Saitoh
Journal of applied physics 69 (1), 207-212, 1991
841991
Directional copper deposition using dc magnetron self-sputtering
ZJ Radzimski, WM Posadowski, SM Rossnagel, S Shingubara
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
821998
Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents
G Tsutsui, S Huang, H Sakaue, S Shingubara, T Takahagi
Japanese Journal of Applied Physics 40 (1R), 346, 2001
772001
Fabrication of nanohole array on Si using self-organized porous alumina mask
S Shingubara, O Okino, Y Murakami, H Sakaue, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
752001
Formation of aluminum nanodot array by combination of nanoindentation and anodic oxidation of aluminum
S Shingubara, Y Murakami, K Morimoto, T Takahagi
Surface Science 532, 317-323, 2003
742003
Effects of the surface pressure on the formation of Langmuir− Blodgett monolayer of nanoparticles
S Huang, K Minami, H Sakaue, S Shingubara, T Takahagi
Langmuir 20 (6), 2274-2276, 2004
682004
Cu2ZnSnS4 thin films and nanowires prepared by different single-step electrodeposition method in quaternary electrolyte
M Jeon, T Shimizu, S Shingubara
Materials Letters 65 (15-16), 2364-2367, 2011
642011
Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating
Z Wang, T Ida, H Sakaue, S Shingubara, T Takahagi
Electrochemical and Solid State Letters 6 (3), C38, 2003
622003
Adhesion improvement of electroless copper to a polyimide film substrate by combining surface microroughening and imide ring cleavage
Z Wang, A Furuya, K Yasuda, H Ikeda, T Baba, M Hagiwara, S Toki, ...
Journal of adhesion science and technology 16 (8), 1027-1040, 2002
612002
Formation of a large-scale Langmuir–Blodgett monolayer of alkanethiol-encapsulated gold particles
S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
592001
Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology
F Inoue, T Shimizu, T Yokoyama, H Miyake, K Kondo, T Saito, T Hayashi, ...
Electrochimica Acta 56 (17), 6245-6250, 2011
532011
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