Juan Paolo S. Bermundo
Juan Paolo S. Bermundo
確認したメール アドレス: ms.naist.jp
タイトル
引用先
引用先
Highly reliable polysilsesquioxane passivation layer for a-InGaZnO thin-film transistors
JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, Y Uraoka
ECS Journal of Solid State Science and Technology 3 (2), Q16, 2013
372013
Effect of contact material on amorphous InGaZnO thin-film transistor characteristics
Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, Y Osada, ...
Japanese Journal of Applied Physics 53 (3S1), 03CC04, 2014
352014
Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stress
Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ...
ECS Journal of Solid State Science and Technology 3 (9), Q3001, 2014
282014
Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, MN Fujii, Y Uraoka
Applied Physics Letters 107 (3), 033504, 2015
192015
Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers
JP Bermundo, Y Ishikawa, MN Fujii, T Nonaka, R Ishihara, H Ikenoue, ...
Journal of Physics D: Applied Physics 49 (3), 035102, 2015
182015
Reliability improvement of amorphous InGaZnO thin-film transistors by less hydroxyl-groups siloxane passivation
C Kulchaisit, Y Ishikawa, MN Fujii, H Yamazaki, JPS Bermundo, ...
Journal of Display Technology 12 (3), 263-267, 2016
152016
H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing
JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka
Applied Physics Letters 110 (13), 133503, 2017
92017
Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
N Yoshida, JP Bermundo, Y Ishikawa, T Nonaka, K Taniguchi, Y Uraoka
Applied Physics Letters 112 (21), 213503, 2018
72018
Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment
MPA Jallorina, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka
Applied Physics Letters 112 (19), 193501, 2018
72018
Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors
MN Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, ...
AIP Advances 6 (6), 065216, 2016
72016
Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
DC Corsino, JPS Bermundo, MN Fujii, K Takahashi, Y Ishikawa, Y Uraoka
Applied Physics Express 11 (6), 061103, 2018
62018
High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator
C Kulchaisit, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka
AIP Advances 8 (9), 095001, 2018
52018
Self-heating suppressed structure of a-IGZO thin-film transistor
K Kise, MN Fujii, JP Bermundo, Y Ishikawa, Y Uraoka
IEEE Electron Device Letters 39 (9), 1322-1325, 2018
52018
Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45° C
JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka
ACS applied materials & interfaces 10 (29), 24590-24597, 2018
52018
Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane
JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, Y Uraoka
MRS Online Proceedings Library Archive 1633, 139-144, 2014
52014
Hot carrier effects in InGaZnO thin-film transistor
T Takahashi, R Miyanaga, MN Fujii, J Tanaka, K Takechi, H Tanabe, ...
Applied Physics Express 12 (9), 094007, 2019
42019
Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
N Yoshida, JP Bermundo, Y Ishikawa, T Nonaka, K Taniguchi, Y Uraoka
Journal of Physics D: Applied Physics 51 (12), 125105, 2018
42018
Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors
H Yamazaki, Y Ishikawa, MN Fujii, JP Bermundo, E Takahashi, Y Andoh, ...
ECS Journal of Solid State Science and Technology 5 (5), N17, 2016
42016
Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors
N Yoshida, JP Bermundo, Y Ishikawa, T Nonaka, Y Uraoka
Japanese Journal of Applied Physics 57 (9), 090306, 2018
32018
30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO
JPS Bermundo, C Kulchaisit, DC Corsino, A Syairah, MN Fujii, H Ikenoue, ...
SID Symposium Digest of Technical Papers 50 (1), 422-425, 2019
22019
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