フォロー
Takashi Suemasu
Takashi Suemasu
確認したメール アドレス: u.tsukuba.ac.jp - ホームページ
タイトル
引用先
引用先
Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy
K Toh, T Saito, T Suemasu
Japanese Journal of Applied Physics 50 (6R), 068001, 2011
2752011
Room temperature 1.6 µm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region
TST Suemasu, YNY Negishi, KTK Takakura, FHF Hasegawa
Japanese Journal of Applied Physics 39 (10B), L1013, 2000
2602000
Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
K Morita, Y Inomata, T Suemasu
Thin Solid Films 508 (1-2), 363-366, 2006
2522006
Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique
M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ...
Journal of crystal growth 348 (1), 75-79, 2012
1812012
Epitaxial growth of semiconducting BaSi2 films on Si (111) substrates by molecular beam epitaxy
Y Inomata, T Nakamura, T Suemasu, F Hasegawa
Japanese Journal of Applied Physics 43 (4A), L478, 2004
1732004
Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications
T Suemasu, N Usami
Journal of Physics D: Applied Physics 50 (2), 023001, 2016
1722016
Investigation of the energy band structure of orthorhombic by optical and electrical measurements and theoretical calculations
T Nakamura, T Suemasu, K Takakura, F Hasegawa, A Wakahara, M Imai
Applied physics letters 81 (6), 1032-1034, 2002
1522002
Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells
S Yachi, R Takabe, H Takeuchi, K Toko, T Suemasu
Applied Physics Letters 109 (7), 2016
1422016
Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications
T Suemasu
Japanese Journal of Applied Physics 54 (7S2), 07JA01, 2015
1282015
Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing
KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu
Applied Physics Express 6 (11), 112302, 2013
1272013
Epitaxial growth of semiconducting BaSi2 thin films on Si (111) substrates by reactive deposition epitaxy
Y Inomata, T Nakamura, T Suemasu, F Hasegawa
Japanese journal of applied physics 43 (7R), 4155, 2004
1252004
Formation of β-FeSi 2 layers on Si (001) substrates
MTM Tanaka, YKY Kumagai, TST Suemasu, FHF Hasegawa
Japanese journal of applied physics 36 (6R), 3620, 1997
1141997
Low-temperature (180° C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
K Toko, R Numata, N Oya, N Fukata, N Usami, T Suemasu
Applied physics letters 104 (2), 2014
1112014
Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy
M Kobayashi, Y Matsumoto, Y Ichikawa, D Tsukada, T Suemasu
Applied physics express 1 (5), 051403, 2008
1102008
Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ...
Applied physics letters 101 (7), 2012
1082012
Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111)
R Takabe, KO Hara, M Baba, W Du, N Shimada, K Toko, N Usami, ...
Journal of applied physics 115 (19), 2014
1072014
Influence of Si growth temperature for embedding β- and resultant strain in β- on light emission from light-emitting diodes
T Suemasu, Y Negishi, K Takakura, F Hasegawa, T Chikyow
Applied Physics Letters 79 (12), 1804-1806, 2001
1072001
High-electrical-conductivity multilayer graphene formed by layer exchange with controlled thickness and interlayer
H Murata, Y Nakajima, N Saitoh, N Yoshizawa, T Suemasu, K Toko
Scientific reports 9 (1), 4068, 2019
1042019
Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu
Journal of applied physics 112 (8), 2012
1042012
Perpendicular magnetic anisotropy of Mn4N films on MgO (001) and SrTiO3 (001) substrates
Y Yasutomi, K Ito, T Sanai, K Toko, T Suemasu
Journal of applied physics 115 (17), 2014
992014
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論文 1–20