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Da-Shan Shang
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Year
Effect of carrier trapping on the hysteretic current-voltage characteristics in heterostructures
DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
Physical Review B—Condensed Matter and Materials Physics 73 (24), 245427, 2006
4412006
All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing
CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ...
Advanced Functional Materials 28 (42), 1804170, 2018
3902018
A synaptic transistor based on quasi‐2D molybdenum oxide
CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun
Advanced Materials 29 (27), 1700906, 2017
3762017
A highly CMOS compatible hafnia-based ferroelectric diode
Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ...
Nature communications 11 (1), 1391, 2020
1732020
Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing
Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ...
Advanced Materials 32 (47), 2003018, 2020
1262020
Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites
K Zhai, Y Wu, S Shen, W Tian, H Cao, Y Chai, BC Chakoumakos, ...
Nature communications 8 (1), 519, 2017
1252017
Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode
R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ...
IEEE Electron Device Letters 40 (11), 1744-1747, 2019
1152019
Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
DS Shang, L Shi, JR Sun, BG Shen, F Zhuge, RW Li, YG Zhao
Applied Physics Letters 96 (7), 2010
1112010
Resistive switching properties in oxygen-deficient Pr0. 7Ca0. 3MnO3 junctions with active Al top electrodes
SL Li, DS Shang, J Li, JL Gang, DN Zheng
Journal of Applied Physics 105 (3), 2009
902009
Mimicking synaptic plasticity and neural network using memtranstors
JX Shen, DS Shang, YS Chai, SG Wang, BG Shen, Y Sun
Advanced Materials 30 (12), 1706717, 2018
882018
Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing
C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ...
ACS applied materials & interfaces 12 (10), 11945-11954, 2020
862020
Room‐temperature nonvolatile memory based on a single‐phase multiferroic hexaferrite
K Zhai, DS Shang, YS Chai, G Li, JW Cai, BG Shen, Y Sun
Advanced Functional Materials 28 (9), 1705771, 2018
852018
A reliable all‐2D materials artificial synapse for high energy‐efficient neuromorphic computing
J Tang, C He, J Tang, K Yue, Q Zhang, Y Liu, Q Wang, S Wang, N Li, ...
Advanced Functional Materials 31 (27), 2011083, 2021
842021
Bipolar resistance switching in fully transparent ZnO: Mg-based devices
L Shi, D Shang, J Sun, B Shen
Applied physics express 2 (10), 101602, 2009
802009
Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0. 7Ca0. 3MnO3–Pt sandwiches
R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
Applied Physics Letters 86 (17), 2005
802005
Nonvolatile memory based on nonlinear magnetoelectric effects
J Shen, J Cong, Y Chai, D Shang, S Shen, K Zhai, Y Tian, Y Sun
Physical Review Applied 6 (2), 021001, 2016
752016
Photoresponse of the Schottky junction Au/SrTiO3: Nb in different resistive states
DS Shang, JR Sun, L Shi, BG Shen
Applied Physics Letters 93 (10), 2008
722008
Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks
X Zhang, J Lu, Z Wang, R Wang, J Wei, T Shi, C Dou, Z Wu, J Zhu, ...
Science Bulletin 66 (16), 1624-1633, 2021
712021
One transistor one electrolyte‐gated transistor based spiking neural network for power‐efficient neuromorphic computing system
Y Li, Z Xuan, J Lu, Z Wang, X Zhang, Z Wu, Y Wang, H Xu, C Dou, Y Kang, ...
Advanced Functional Materials 31 (26), 2100042, 2021
702021
Electrochemical-reaction-induced synaptic plasticity in MoO x-based solid state electrochemical cells
CS Yang, DS Shang, YS Chai, LQ Yan, BG Shen, Y Sun
Physical Chemistry Chemical Physics 19 (6), 4190-4198, 2017
682017
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