| Perpendicular giant magnetoresistances of Ag/Co multilayers WP Pratt Jr, SF Lee, JM Slaughter, R Loloee, PA Schroeder, J Bass Physical review letters 66 (23), 3060, 1991 | 895 | 1991 |
| A 4-Mb toggle MRAM based on a novel bit and switching method BN Engel, J Akerman, B Butcher, RW Dave, M DeHerrera, M Durlam, ... IEEE transactions on magnetics 41 (1), 132-136, 2005 | 698 | 2005 |
| Progress and outlook for MRAM technology S Tehrani, JM Slaughter, E Chen, M Durlam, J Shi, M DeHerren IEEE Transactions on Magnetics 35 (5), 2814-2819, 1999 | 632 | 1999 |
| Magnetoresistive random access memory using magnetic tunnel junctions S Tehrani, JM Slaughter, M Deherrera, BN Engel, ND Rizzo, J Salter, ... Proceedings of the IEEE 91 (5), 703-714, 2003 | 628 | 2003 |
| Magnetoresistive random access memory D Apalkov, B Dieny, JM Slaughter Proceedings of the IEEE 104 (10), 1796-1830, 2016 | 572 | 2016 |
| Recent developments in magnetic tunnel junction MRAM S Tehrani, B Engel, JM Slaughter, E Chen, M DeHerrera, M Durlam, ... IEEE Transactions on magnetics 36 (5), 2752-2757, 2000 | 437 | 2000 |
| High density submicron magnetoresistive random access memory S Tehrani, E Chen, M Durlam, M DeHerrera, JM Slaughter, J Shi, ... Journal of Applied Physics 85 (8), 5822-5827, 1999 | 286 | 1999 |
| A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects M Durlam, PJ Naji, A Omair, M DeHerrera, J Calder, JM Slaughter, ... IEEE Journal of Solid-State Circuits 38 (5), 769-773, 2003 | 247 | 2003 |
| The science and technology of magnetoresistive tunneling memory BN Engel, ND Rizzo, J Janesky, JM Slaughter, R Dave, M DeHerrera, ... IEEE Transactions on Nanotechnology 1 (1), 32-38, 2002 | 189 | 2002 |
| Method of fabricating flux concentrating layer for use with magnetoresistive random access memories M Durlam, EY Chen, SN Tehrani, JM Slaughter, G Kerszykowski, ... US Patent 6,211,090, 2001 | 178 | 2001 |
| Magnetic random access memory and fabricating method thereof M Durlam, G Kerszykowski, J Slaughter, T Zhu, E Chen, SN Tehrani, ... US Patent 5,940,319, 1999 | 176 | 1999 |
| A fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology ND Rizzo, D Houssameddine, J Janesky, R Whig, FB Mancoff, ... IEEE Transactions on Magnetics 49 (7), 4441-4446, 2013 | 161 | 2013 |
| A 0.18/spl mu/m 4 Mbit toggling MRAM M Durlam, D Addie, J Akerman, B Butcher, P Brown, J Chan, M DeHerrera, ... 2004 International Conference on Integrated Circuit Design and Technology …, 2004 | 159 | 2004 |
| Low-frequency magnetic and resistance noise in magnetic tunnel junctions L Jiang, ER Nowak, PE Scott, J Johnson, JM Slaughter, JJ Sun, RW Dave Physical Review B 69 (5), 054407, 2004 | 159 | 2004 |
| Magnetic element with dual magnetic states and fabrication method thereof EY Chen, JM Slaughter, M Durlam, M DeHerrera, SN Tehrani US Patent 6,233,172, 2001 | 157 | 2001 |
| Magnetic random access memory and fabricating method thereof M Durlam, G Kerszykowski, J Slaughter, T Zhu, E Chen, SN Tehrani, ... US Patent 6,174,737, 2001 | 148 | 2001 |
| Magnetic element with improved field response and fabricating method thereof EY Chen, JM Slaughter, J Shi US Patent 6,292,389, 2001 | 143 | 2001 |
| Fundamentals of MRAM technology JM Slaughter, RW Dave, M DeHerrera, M Durlam, BN Engel, J Janesky, ... Journal of superconductivity 15 (1), 19-25, 2002 | 138 | 2002 |
| Magnetic tunnel junction element structures and methods for fabricating the same J Sun, RW Dave, JM Slaughter, J Akerman US Patent 7,098,495, 2006 | 130 | 2006 |
| Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory ND Rizzo, M DeHerrera, J Janesky, B Engel, J Slaughter, S Tehrani Applied physics letters 80 (13), 2335-2337, 2002 | 129 | 2002 |
