Shahab Siddiqui
Shahab Siddiqui
確認したメール アドレス: us.ibm.com
タイトル
引用先
引用先
Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
S Siddiqui, MP Chudzik, CJ Radens
US Patent 8,373,239, 2013
1912013
Hybrid bonding interface for 3-dimensional chip integration
KW Barth, RA Donaton, S Galis, KS Petrarca, S Siddiqui
US Patent 8,159,060, 2012
1242012
High Performance 14nm SOI FinFET CMOS Technology with 0.0174 μ m2 embedded DRAM and 15 Levels of Cu Metallization
IEDM, 2014, 2014
113*2014
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
1092011
Replacement gate MOSFET with self-aligned diffusion contact
SH Jain, CJ Radens, S Siddiqui, JW Strane
US Patent 8,421,077, 2013
652013
Modification of porous silica particles with poly(acrylic acid)
RMO K. Suzuki, S. Siddiqui, C. Chappell, J. A. Siddiqui
Polymers for Advanced Technologies - POLYM ADVAN TECHNOL 11 (no. 2), 92-97, 2000
45*2000
Semiconductor devices having different gate oxide thicknesses
CDW Adams, MP Chudzik, SA Krishnan, U Kwon, S Siddiqui
US Patent 8,941,177, 2015
362015
Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
S Siddiqui, AN Zainuddin, B Baumert, S Uppal
US Patent 10,106,892, 2018
252018
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
M Dai, Y Wang, J Shepard, J Liu, M Brodsky, S Siddiqui, P Ronsheim, ...
Journal of Applied Physics 113 (4), 044103, 2013
222013
Improving yield through the application of process window OPC
JT Azpiroz, A Krasnoperova, S Siddiqui, K Settlemyer, I Graur, I Stobert, ...
Optical Microlithography XXII 7274, 727411, 2009
222009
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
MJ Brodsky, MM Chowdhury, MP Chudzik, M Dai, SA Krishnan, ...
US Patent 8,809,152, 2014
122014
Methods and structure to form high K metal gate stack with single work-function metal
T Ando, B Kannan, S Krishnan, U Kwon, S Siddiqui
US Patent 9,515,164, 2016
102016
Composite high-k gate dielectric stack for reducing gate leakage
MJ Brodsky, MP Chudzik, M Dai, JF Shepard Jr, S Siddiqui, Y Wang, J Liu
US Patent 9,029,959, 2015
102015
Development or removal of block copolymer or PMMA-bS-based resist using polar supercritical solvent
ME Colburn, D Shneyder, S Siddiqui
US Patent 7,407,554, 2008
102008
Structure and method to form input/output devices
T Ando, M Dai, MM Frank, BP Linder, S Siddiqui
US Patent 8,836,037, 2014
82014
Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
S Siddiqui, MP Chudzik, CJ Radens
US Patent 9,040,369, 2015
72015
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
S Siddiqui, MM Chowdhury, M Brodsky, N Rahim, M Dai, S Krishnan, ...
ECS Transactions 53 (3), 137, 2013
72013
Method to create air gaps using non-plasma processes to damage ILD materials
CD Dimitrakopoulos, DC Edelstein, VJ McGahay, SV Nittta, KS Petrarca, ...
US Patent 7,531,444, 2009
72009
Self-assembled material pattern transfer contrast enhancement
LA Clevenger, TJ Dalton, H Hichri, LL Hsu, KA Kumar, C Radens, ...
US Patent App. 11/933,760, 2009
72009
Response of soybean to phosphorus and zinc fertilization under irrigation regime.
AS Osman, YMY Abido, SMM Allam
Annals of Agricultural Science (Cairo) 45 (1), 229-238, 2000
72000
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