| Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio DK Mohata, R Bijesh, Y Zhu, MK Hudait, R Southwick, Z Chbili, ... 2012 Symposium on VLSI technology (VLSIT), 53-54, 2012 | 81 | 2012 |
| X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100),(110), and (111) Ge Y Zhu, N Jain, MK Hudait, D Maurya, R Varghese, S Priya Journal of Vacuum Science & Technology B 32 (1), 2014 | 72 | 2014 |
| Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates MK Hudait, Y Zhu, N Jain, JL Hunter Journal of Vacuum Science & Technology B 31 (1), 2013 | 60 | 2013 |
| Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors M Clavel, P Goley, N Jain, Y Zhu, MK Hudait IEEE Journal of the Electron Devices Society 3 (3), 184-193, 2015 | 47 | 2015 |
| Low-power tunnel field effect transistors using mixed As and Sb based heterostructures Y Zhu, MK Hudait Nanotechnology Reviews 2 (6), 637-678, 2013 | 46 | 2013 |
| Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100),(110), and (111) A GaAs substrates by molecular beam epitaxy MK Hudait, Y Zhu, D Maurya, S Priya, PK Patra, AWK Ma, A Aphale, ... Journal of Applied Physics 113 (13), 2013 | 44 | 2013 |
| Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ... Journal of Applied Physics 112 (9), 2012 | 42 | 2012 |
| Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ... Journal of Applied Physics 112 (2), 2012 | 39 | 2012 |
| Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors MK Hudait, M Clavel, P Goley, N Jain, Y Zhu Scientific reports 4 (1), 6964, 2014 | 38 | 2014 |
| In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy MK Hudait, Y Zhu, N Jain, S Vijayaraghavan, A Saha, T Merritt, ... Journal of Vacuum Science & Technology B 30 (5), 2012 | 34 | 2012 |
| Reliability studies on high-temperature operation of mixed As/Sb staggered gap tunnel FET material and devices Y Zhu, DK Mohata, S Datta, MK Hudait IEEE transactions on device and materials reliability 14 (1), 245-254, 2013 | 33 | 2013 |
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell XJ Shang, JF He, HL Wang, MF Li, Y Zhu, ZC Niu, Y Fu Applied Physics A: Materials Science & Processing 103 (2), 335-341, 2011 | 30 | 2011 |
| Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications MK Hudait, M Clavel, Y Zhu, PS Goley, S Kundu, D Maurya, S Priya ACS applied materials & interfaces 7 (9), 5471-5479, 2015 | 28 | 2015 |
| Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100) Ge,(110) Ge, and (111) Ge layers MK Hudait, Y Zhu Journal of Applied Physics 113 (11), 2013 | 28 | 2013 |
| Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ... Journal of Applied Physics 113 (2), 2013 | 28 | 2013 |
| Heterointerface engineering of broken-gap InAs/GaSb multilayer structures JS Liu, Y Zhu, PS Goley, MK Hudait ACS applied materials & interfaces 7 (4), 2512-2517, 2015 | 27 | 2015 |
| Microfluidic low-input fluidized-bed enabled ChIP-seq device for automated and parallel analysis of histone modifications TW Murphy, YP Hsieh, S Ma, Y Zhu, C Lu Analytical chemistry 90 (12), 7666-7674, 2018 | 25 | 2018 |
| Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors B Rajamohanan, D Mohata, Y Zhu, M Hudait, Z Jiang, M Hollander, ... Journal of Applied Physics 115 (4), 2014 | 25 | 2014 |
| Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ... Applied Physics Letters 101 (11), 112106-112106-4, 2012 | 23 | 2012 |
| Energy band alignment of atomic layer deposited HfO2 on epitaxial (110) Ge grown by molecular beam epitaxy MK Hudait, Y Zhu, D Maurya, S Priya Applied Physics Letters 102, 093109, 2013 | 20 | 2013 |
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGP在 vt.edu 的电子邮件经过验证
