| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 100 | 2019 |
| Vanadium disulfide flakes with nanolayered titanium disulfide coating as cathode materials in lithium-ion batteries L Li, Z Li, A Yoshimura, C Sun, T Wang, Y Chen, Z Chen, A Littlejohn, ... Nature communications 10 (1), 1764, 2019 | 92 | 2019 |
| Large Single Crystal SnS2 Flakes Synthesized from Coevaporation of Sn and S YB Yang, JK Dash, AJ Littlejohn, Y Xiang, Y Wang, J Shi, LH Zhang, ... Crystal Growth & Design 16 (2), 961-973, 2016 | 58 | 2016 |
| Remote epitaxy of copper on sapphire through monolayer graphene buffer Z Lu, X Sun, W Xie, A Littlejohn, GC Wang, S Zhang, MA Washington, ... Nanotechnology 29 (44), 445702, 2018 | 32 | 2018 |
| van der Waals epitaxy of Ge films on mica AJ Littlejohn, Y Xiang, E Rauch, TM Lu, GC Wang Journal of Applied Physics 122 (18), 2017 | 27 | 2017 |
| Large metallic vanadium disulfide ultrathin flakes for spintronic circuits and quantum computing devices AJ Littlejohn, Z Li, Z Lu, X Sun, P Nawarat, Y Wang, Y Li, T Wang, Y Chen, ... ACS Applied Nano Materials 2 (6), 3684-3694, 2019 | 18 | 2019 |
| Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire (001) film AJ Littlejohn, Y Yang, Z Lu, E Shin, KC Pan, G Subramanyam, V Vasilyev, ... Applied Surface Science 419, 365-372, 2017 | 16 | 2017 |
| Experimental and credentialing capital: an adaptable framework for facilitating science outreach for underrepresented youth JF Drazan, AR D'Amato, MA Winkelman, AJ Littlejohn, C Johnson, ... 2015 37th Annual International Conference of the IEEE Engineering in …, 2015 | 8 | 2015 |
| Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication D Ouellette, C Wiegand, J Brockman, T Rahman, O Golonzka, A Smith, ... US Patent 10,943,950, 2021 | 6 | 2021 |
| Orientation epitaxy of Ge 1− x Sn x films grown on single crystal CaF 2 substrates AJ Littlejohn, TM Lu, LH Zhang, K Kisslinger, GC Wang CrystEngComm 18 (15), 2757-2769, 2016 | 4 | 2016 |
| Orientation epitaxy of Ge 1− x Sn x films grown on single crystal CaF 2 substrates AJ Littlejohn, TM Lu, LH Zhang, K Kisslinger, GC Wang CrystEngComm 18 (15), 2757-2769, 2016 | 4 | 2016 |
| Magnetic memory devices and methods of fabrication D Ouellette, C Wiegand, J Brockman, T Rahman, O Golonzka, A Smith, ... US Patent 11,063,088, 2021 | 3 | 2021 |
| Van der Waals substrate mediated heteroepitaxy of germanium and vanadium disulfide films AJ Littlejohn Rensselaer Polytechnic Institute, 2018 | 1 | 2018 |
| Acknowledgement of reviewers for ITL volumes 168–169 A Batty, C Bernales, MB López, MB Mota, J Bouchard, M Bygate, A Caras, ... | | |
