| Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide D Okamoto, H Yano, K Hirata, T Hatayama, T Fuyuki IEEE Electron Device Letters 31 (7), 710-712, 2010 | 346 | 2010 |
| High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~ 0) face H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara IEEE Electron Device Letters 20 (12), 611-613, 1999 | 267 | 1999 |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's H Yano, F Katafuchi, T Kimoto, H Matsunami IEEE Transactions on Electron Devices 46 (3), 504-510, 1999 | 191 | 1999 |
| Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation D Okamoto, H Yano, T Hatayama, T Fuyuki Applied Physics Letters 96 (20), 2010 | 168 | 2010 |
| Floating nanodot gate memory devices based on biomineralized inorganic nanodot array as a storage node A Miura, T Hikono, T Matsumura, H Yano, T Hatayama, Y Uraoka, ... Japanese journal of applied physics 45 (1L), L1, 2005 | 125 | 2005 |
| A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the face H Yano, T Hirao, T Kimoto, H Matsunami Applied Physics Letters 78 (3), 374-376, 2001 | 118 | 2001 |
| Improved channel mobility in 4H-SiC MOSFETs by boron passivation D Okamoto, M Sometani, S Harada, R Kosugi, Y Yonezawa, H Yano IEEE Electron Device Letters 35 (12), 1176-1178, 2014 | 116 | 2014 |
| Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements T Hatakeyama, Y Kiuchi, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 10 (4), 046601, 2017 | 115 | 2017 |
| Threshold voltage instability in 4H-SiC MOSFETs with phosphorus-doped and nitrided gate oxides H Yano, N Kanafuji, A Osawa, T Hatayama, T Fuyuki IEEE Transactions on electron devices 62 (2), 324-332, 2014 | 115 | 2014 |
| Thermal analysis of degradation in Ga2O3–In2O3–ZnO thin-film transistors M Fujii, H Yano, T Hatayama, Y Uraoka, T Fuyuki, JS Jung, JY Kwon Japanese journal of applied physics 47 (8R), 6236, 2008 | 98 | 2008 |
| Traps at the SiC/SiO2-interface G Pensl, M Bassler, F Ciobanu, V Afanas' ev, H Yano, T Kimoto, ... MRS Online Proceedings Library (OPL) 640, H3. 2, 2000 | 86 | 2000 |
| Shallow states at interface on and (0001) faces H Yano, T Kimoto, H Matsunami Applied physics letters 81 (2), 301-303, 2002 | 76 | 2002 |
| Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates H Yano, H Nakao, H Mikami, T Hatayama, Y Uraoka, T Fuyuki Applied physics letters 90 (4), 2007 | 66 | 2007 |
| Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope Y Uraoka, N Hirai, H Yano, T Hatayama, T Fuyuki IEEE Transactions on Electron devices 51 (1), 28-35, 2004 | 66 | 2004 |
| MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation H Yano, T Kimoto, H Matsunami, M Bassler, G Pensl Materials Science Forum 338, 1109-1112, 2000 | 62 | 2000 |
| Investigations of SiC MOSFET short-circuit failure mechanisms using electrical, thermal, and mechanical stress analyses K Yao, H Yano, H Tadano, N Iwamuro IEEE Transactions on Electron Devices 67 (10), 4328-4334, 2020 | 59 | 2020 |
| Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates H Yano, H Nakao, T Hatayama, Y Uraoka, T Fuyuki Materials science forum 556, 807-810, 2007 | 57 | 2007 |
| Interface properties in metal-oxide-semiconductor structures on n-type H Yano, T Hirao, T Kimoto, H Matsunami, H Shiomi Applied physics letters 81 (25), 4772-4774, 2002 | 50 | 2002 |
| High channel mobility in inversion layer of SiC MOSFETs for power switching transistors HYH Yano, THT Hirao, TKT Kimoto, HMH Matsunami Japanese Journal of Applied Physics 39 (4S), 2008, 2000 | 47 | 2000 |
| Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon p-channel thin film transistors Y Uraoka, Y Morita, H Yano, T Hatayama, T Fuyuki Japanese journal of applied physics 41 (10R), 5894, 2002 | 43 | 2002 |
Noriyuki IwamuroProfessor, Graduate School of Pure and Applied Sciences確認したメール アドレス: power.bk.tsukuba.ac.jp
