| Two-beam-laser interference mediated reduction, patterning and nanostructuring of graphene oxide for the production of a flexible humidity sensing device L Guo, HB Jiang, RQ Shao, YL Zhang, SY Xie, JN Wang, XB Li, F Jiang, ... Carbon 50 (4), 1667-1673, 2012 | 307 | 2012 |
| Monolayer II-VI semiconductors: A first-principles prediction Hui Zheng, Xian-Bin Li, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Yuanping ... Physical Review B 92 (12), 115307, 2015 | 188 | 2015 |
| One order of magnitude faster phase change at reduced power in Ti-Sb-Te M Zhu, M Xia, F Rao, X Li, L Wu, X Ji, S Lv, Z Song, S Feng, H Sun, ... Nature communications 5, 4086, 2014 | 179 | 2014 |
| Bandgap tailoring and synchronous microdevices patterning of graphene oxides L Guo, RQ Shao, YL Zhang, HB Jiang, XB Li, SY Xie, BB Xu, QD Chen, ... The Journal of Physical Chemistry C 116 (5), 3594-3599, 2012 | 136 | 2012 |
| Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu 2 ZnSnS 4 D Han, YY Sun, J Bang, YY Zhang, HB Sun, XB Li, SB Zhang Physical Review B 87 (15), 155206, 2013 | 129 | 2013 |
| Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer L Wang, Z Wang, HY Wang, G Grinblat, YL Huang, D Wang, XH Ye, XB Li, ... Nature Communications 8, 13906, 2017 | 116 | 2017 |
| Optical Tamm states enhanced broad-band absorption of organic solar cells XL Zhang, JF Song, XB Li, J Feng, HB Sun Applied Physics Letters 101 (24), 243901, 2012 | 107 | 2012 |
| Role of electronic excitation in the amorphization of Ge-Sb-Te alloys XB Li, XQ Liu, X Liu, D Han, Z Zhang, XD Han, HB Sun, SB Zhang Physical review letters 107 (1), 015501, 2011 | 107 | 2011 |
| Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization XB Li, NK Chen, XP Wang, HB Sun Advanced Functional Materials 28 (44), 1803380, 2018 | 102 | 2018 |
| Understanding phase-change behaviors of carbon-doped Ge2Sb2Te5 for phase-change memory application X Zhou, M Xia, F Rao, L Wu, X Li, Z Song, S Feng, H Sun ACS applied materials & interfaces 6 (16), 14207-14214, 2014 | 101 | 2014 |
| Two-dimensional transition metal honeycomb realized: Hf on Ir (111) L Li, Y Wang, S Xie, XB Li, YQ Wang, R Wu, H Sun, S Zhang, HJ Gao Nano letters 13 (10), 4671-4674, 2013 | 100 | 2013 |
| New structural picture of the Ge 2 Sb 2 Te 5 phase-change alloy XQ Liu, XB Li, L Zhang, YQ Cheng, ZG Yan, M Xu, XD Han, SB Zhang, ... Physical review letters 106 (2), 025501, 2011 | 84 | 2011 |
| Determination of Formation and Ionization Energies of Charged Defects in Two-Dimensional Materials D Wang, D Han, XB Li, SY Xie, NK Chen, WQ Tian, D West, HB Sun, ... Physical Review Letters 114 (19), 196801, 2015 | 80 | 2015 |
| Novel Zn-doped SnO 2 hierarchical architectures: synthesis, characterization, and gas sensing properties P Sun, L You, Y Sun, N Chen, X Li, H Sun, J Ma, G Lu CrystEngComm 14 (5), 1701-1708, 2012 | 75 | 2012 |
| First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer SY Xie, XB Li, WQ Tian, NK Chen, XL Zhang, Y Wang, S Zhang, HB Sun Physical Review B 90 (3), 035447, 2014 | 68 | 2014 |
| Laser‐Mediated Programmable N Doping and Simultaneous Reduction of Graphene Oxides L Guo, YL Zhang, DD Han, HB Jiang, D Wang, XB Li, H Xia, J Feng, ... Advanced Optical Materials 2 (2), 120-125, 2014 | 67 | 2014 |
| Flat Boron: A New Cousin of Graphene SY Xie, Y Wang, XB Li Advanced Materials, 1900392, 2019 | 62 | 2019 |
| Quantum‐Confined‐Superfluidics‐Enabled Moisture Actuation Based on Unilaterally Structured Graphene Oxide Papers YL Zhang, YQ Liu, DD Han, JN Ma, D Wang, XB Li, HB Sun Advanced Materials, 1901585, 2019 | 59 | 2019 |
| Highly Efficient Three Primary Color Organic Single‐Crystal Light‐Emitting Devices with Balanced Carrier Injection and Transport R Ding, J Feng, FX Dong, W Zhou, Y Liu, XL Zhang, XP Wang, HH Fang, ... Advanced Functional Materials 27 (13), 1604659, 2017 | 58 | 2017 |
| Engineering two-dimensional electronics by semiconductor defects D Wang, XB Li, D Han, WQ Tian, HB Sun Nano Today 16, 30-45, 2017 | 56 | 2017 |
SB Zhang (Shengbai Zhang)Rensselaer Polytechnic Institute確認したメール アドレス: rpi.edu
