Suivre
Ashish Dabral
Ashish Dabral
PhD Scholar, Ku Leuven/IMEC, Leuven, Belgium
Adresse e-mail validée de kuleuven.be
Titre
Citée par
Citée par
Année
Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions
M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
282019
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice
A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ...
The Journal of Physical Chemistry C 124 (11), 6472-6478, 2020
242020
A systematic study of various 2D materials in the light of defect formation and oxidation
A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois
Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019
232019
Structural characterization of SnS crystals formed by chemical vapour deposition
A Nalin Mehta, H Zhang, A Dabral, O Richard, P Favia, H Bender, ...
Journal of Microscopy 268 (3), 276-287, 2017
182017
Contact resistance at graphene/MoS2 lateral heterostructures
M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 2019
172019
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73, 2018
162018
Titanium (germano-)silicides featuring 10−9Ω·cm2contact resistivity and improved compatibility to advanced CMOS technology
H Yu, M Schaekers, SA Chew, JL Everaert, A Dabral, G Pourtois, ...
2018 18th International Workshop on Junction Technology (IWJT), 1-5, 2018
62018
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
G Pourtois, A Dabral, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Transactions 80 (1), 303, 2017
52017
15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors
D Verreck, ML Van de Put, AS Verhulst, B Soree, W Magnus, A Dabral, ...
2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015
22015
Titanium (Germano-) Silicides Featuring 10-9 Ω∙ cm 2 Contact Resistivity and Improved Compatibility to Advanced CMOS Technology
H Yu, M Schaekers, SA Chew, JL Everaert, A Dabral, G Pourtois, ...
1
Ab initio simulations of 2D materials, interfaces and devices for beyond CMOS applications
A Dabral
2019
Contact resistance at graphene/MoS
M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
2019
(Invited) Layer-Controlled, Wafer-Scale Fabrication of 2D Semiconductor Materials
D Chiappe, V Afanasiev, Y Tomczak, S Sutar, A Leonhardt, J Ludwig, ...
Electrochemical Society Meeting Abstracts 233, 842-842, 2018
2018
Titanium (germano-) silicides featuring Ω. contact resistivity and improved compatibility to advanced CMOS technology
H Yu, M Schaekers, SA Chew, JL Eyeraert, A Dabral, G Pourtois, ...
2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 80-84, 2018
2018
Contact Resistivities at Graphene/MoS2 Lateral Heterojunctions
M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
2018
Transition metal dichalcogenides for nanoelectronics: insights from first-principles simulations
M Houssa, K Iordanidou, A Lu, A Dabral, G Pourtois, V Afanas' ev, ...
E-MRS Fall Meeting, Date: 2017/09/18-2017/09/21, Location: Warsaw, Poland, 2017
2017
Tuning of electrical properties in few layer CVD MoS2 through reduction of ambient exposure
A Leonhardt, D Chiappe, I Asselberghs, N Pinna, A Dabral, A Nalin Mehta, ...
2017
Interface control of 2D materials to enable wafer scale transfer and tuning of electronic properties
D Chiappe, A Leonhardt, CJ Lockhart de la Rosa, I Asselberghs, O Virkki, ...
2017
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–18