| Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ... ACS Applied Nano Materials 2 (2), 760-766, 2019 | 25 | 2019 |
| Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ... The Journal of Physical Chemistry C 124 (11), 6472-6478, 2020 | 21 | 2020 |
| A systematic study of various 2D materials in the light of defect formation and oxidation A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019 | 21 | 2019 |
| Structural characterization of SnS crystals formed by chemical vapour deposition A Nalin Mehta, H Zhang, A Dabral, O Richard, P Favia, H Bender, ... Journal of Microscopy 268 (3), 276-287, 2017 | 15 | 2017 |
| Contact resistance at graphene/MoS2 lateral heterostructures M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ... Applied Physics Letters 114 (16), 2019 | 14 | 2019 |
| Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ... ECS Journal of Solid State Science and Technology 7 (6), N73, 2018 | 14 | 2018 |
| Titanium (germano-)silicides featuring 10−9Ω·cm2contact resistivity and improved compatibility to advanced CMOS technology H Yu, M Schaekers, SA Chew, JL Everaert, A Dabral, G Pourtois, ... 2018 18th International Workshop on Junction Technology (IWJT), 1-5, 2018 | 7 | 2018 |
| Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations G Pourtois, A Dabral, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ... ECS Transactions 80 (1), 303, 2017 | 5 | 2017 |
| 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors D Verreck, ML Van de Put, AS Verhulst, B Soree, W Magnus, A Dabral, ... 2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015 | 2 | 2015 |
| Titanium (Germano-) Silicides Featuring 10-9 Ω∙ cm 2 Contact Resistivity and Improved Compatibility to Advanced CMOS Technology H Yu, M Schaekers, SA Chew, JL Everaert, A Dabral, G Pourtois, ... | 1 | |
| Ab initio simulations of 2D materials, interfaces and devices for beyond CMOS applications A Dabral | | 2019 |
| (Invited) Layer-Controlled, Wafer-Scale Fabrication of 2D Semiconductor Materials D Chiappe, V Afanasiev, Y Tomczak, S Sutar, A Leonhardt, J Ludwig, ... Electrochemical Society Meeting Abstracts 233, 842-842, 2018 | | 2018 |
| Contact Resistivities at Graphene/MoS2 Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ... | | 2018 |
| Transition metal dichalcogenides for nanoelectronics: insights from first-principles simulations M Houssa, K Iordanidou, A Lu, A Dabral, G Pourtois, V Afanas' ev, ... E-MRS Fall Meeting, Date: 2017/09/18-2017/09/21, Location: Warsaw, Poland, 2017 | | 2017 |
| Tuning of electrical properties in few layer CVD MoS2 through reduction of ambient exposure A Leonhardt, D Chiappe, I Asselberghs, N Pinna, A Dabral, A Nalin Mehta, ... E-MRS Fall Meeting, Date: 2017/01/01-2017/01/09, Location: Warsaw Poland, 2017 | | 2017 |
| Interface control of 2D materials to enable wafer scale transfer and tuning of electronic properties D Chiappe, A Leonhardt, CJ Lockhart de la Rosa, I Asselberghs, O Virkki, ... Materials Research Society Spring Meeting, Date: 2017/01/01-2017/01/04 …, 2017 | | 2017 |
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