フォロー
Toshiyuki Kaizu
Toshiyuki Kaizu
確認したメール アドレス: crystal.kobe-u.ac.jp
タイトル
引用先
引用先
Stranski-Krastanov growth of InAs quantum dots with narrow size distribution
KYK Yamaguchi, KYK Yujobo, TKT Kaizu
Japanese journal of applied physics 39 (12A), L1245, 2000
2182000
Two-step photon up-conversion solar cells
S Asahi, H Teranishi, K Kusaki, T Kaizu, T Kita
Nature Communications 8 (1), 14962, 2017
1122017
Jpn. J. Appl. Phys.
T Yamaguchi, K Yujobo, T Kaizu
Jpn. J. Appl. Phys 39 (L1245), 2000
1062000
Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy
TKT Kaizu, KYK Yamaguchi
Japanese Journal of Applied Physics 40 (3S), 1885, 2001
492001
Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells
T Kada, S Asahi, T Kaizu, Y Harada, T Kita, R Tamaki, Y Okada, K Miyano
Physical Review B 91 (20), 201303, 2015
482015
Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching
Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ...
Nanotechnology 24 (28), 285301, 2013
422013
Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well …
S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
Journal of Applied Physics 116 (6), 2014
372014
Uniform formation process of self-organized InAs quantum dots
K Yamaguchi, T Kaizu, K Yujobo, Y Saito
Journal of crystal growth 237, 1301-1306, 2002
342002
Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in AlGaAs/GaAs Quantum Wells
S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
IEEE Journal of Photovoltaics 6 (2), 465-472, 2015
332015
Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
T Kaizu, T Matsumura, T Kita
Journal of Applied Physics 118 (15), 2015
312015
Facet formation of uniform InAs quantum dots by molecular beam epitaxy
T Kaizu, K Yamaguchi
Japanese journal of applied physics 42 (6S), 4166, 2003
302003
In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs (001)
M Takahasi, T Kaizu, J Mizuki
Applied physics letters 88 (10), 2006
252006
Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth
T Kaizu, Y Tamura, M Igarashi, W Hu, R Tsukamoto, I Yamashita, ...
Applied Physics Letters 101 (11), 2012
242012
Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots
T Kita, M Suwa, T Kaizu, Y Harada
Journal of Applied Physics 115 (23), 2014
232014
Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
T Kada, S Asahi, T Kaizu, Y Harada, R Tamaki, Y Okada, T Kita
Scientific Reports 7 (1), 5865, 2017
212017
Modification of InAs quantum dot structure during annealing
T Kaizu, M Takahasi, K Yamaguchi
Journal of crystal growth 301, 248-251, 2007
172007
Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
T Sogabe, T Kaizu, Y Okada, S Tomić
Journal of Renewable and Sustainable Energy 6 (1), 2014
162014
In situ determination of Sb distribution in Sb/GaAs (0 0 1) layer for high-density InAs quantum dot growth
T Kaizu, M Takahasi, K Yamaguchi
Journal of crystal growth 310 (15), 3436-3439, 2008
152008
Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure
S Asahi, T Kaizu, T Kita
Scientific Reports 9 (1), 7859, 2019
142019
Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells
S Watanabe, S Asahi, T Kada, K Hirao, T Kaizu, Y Harada, T Kita
Applied Physics Letters 110 (19), 2017
142017
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論文 1–20