| Stranski-Krastanov growth of InAs quantum dots with narrow size distribution KYK Yamaguchi, KYK Yujobo, TKT Kaizu Japanese journal of applied physics 39 (12A), L1245, 2000 | 216 | 2000 |
| Two-step photon up-conversion solar cells S Asahi, H Teranishi, K Kusaki, T Kaizu, T Kita Nature Communications 8 (1), 14962, 2017 | 110 | 2017 |
| Jpn. J. Appl. Phys. T Yamaguchi, K Yujobo, T Kaizu Jpn. J. Appl. Phys 32 (9B), 4069-4073, 1993 | 102 | 1993 |
| Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells T Kada, S Asahi, T Kaizu, Y Harada, T Kita, R Tamaki, Y Okada, K Miyano Physical Review B 91 (20), 201303, 2015 | 49 | 2015 |
| Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy TKT Kaizu, KYK Yamaguchi Japanese Journal of Applied Physics 40 (3S), 1885, 2001 | 49 | 2001 |
| Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ... Nanotechnology 24 (28), 285301, 2013 | 42 | 2013 |
| Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well … S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita Journal of Applied Physics 116 (6), 2014 | 37 | 2014 |
| Uniform formation process of self-organized InAs quantum dots K Yamaguchi, T Kaizu, K Yujobo, Y Saito Journal of crystal growth 237, 1301-1306, 2002 | 34 | 2002 |
| Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in AlGaAs/GaAs Quantum Wells S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita IEEE Journal of Photovoltaics 6 (2), 465-472, 2015 | 33 | 2015 |
| Facet formation of uniform InAs quantum dots by molecular beam epitaxy T Kaizu, K Yamaguchi Japanese journal of applied physics 42 (6S), 4166, 2003 | 30 | 2003 |
| Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature T Kaizu, T Matsumura, T Kita Journal of Applied Physics 118 (15), 2015 | 29 | 2015 |
| Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth T Kaizu, Y Tamura, M Igarashi, W Hu, R Tsukamoto, I Yamashita, ... Applied Physics Letters 101 (11), 2012 | 25 | 2012 |
| In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs (001) M Takahasi, T Kaizu, J Mizuki Applied physics letters 88 (10), 2006 | 25 | 2006 |
| Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots T Kita, M Suwa, T Kaizu, Y Harada Journal of Applied Physics 115 (23), 2014 | 22 | 2014 |
| Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells T Kada, S Asahi, T Kaizu, Y Harada, R Tamaki, Y Okada, T Kita Scientific Reports 7 (1), 5865, 2017 | 21 | 2017 |
| Modification of InAs quantum dot structure during annealing T Kaizu, M Takahasi, K Yamaguchi Journal of crystal growth 301, 248-251, 2007 | 17 | 2007 |
| Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell T Sogabe, T Kaizu, Y Okada, S Tomić Journal of Renewable and Sustainable Energy 6 (1), 2014 | 16 | 2014 |
| Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells S Watanabe, S Asahi, T Kada, K Hirao, T Kaizu, Y Harada, T Kita Applied Physics Letters 110 (19), 2017 | 14 | 2017 |
| Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy Y Suzuki, T Kaizu, K Yamaguchi Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 555-559, 2004 | 14 | 2004 |
| Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure S Asahi, T Kaizu, T Kita Scientific Reports 9 (1), 7859, 2019 | 13 | 2019 |
