| Damped oscillations in reflection high energy electron diffraction during GaAs MBE JM Van Hove, CS Lent, PR Pukite, PI Cohen Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1983 | 442 | 1983 |
| Birth-death models of epitaxy: I. Diffraction oscillations from low index surfaces PI Cohen, GS Petrich, PR Pukite, GJ Whaley, AS Arrott Surface science 216 (1-2), 222-248, 1989 | 310 | 1989 |
| Diffraction from stepped surfaces: II. Arbitrary terrace distributions PR Pukite, CS Lent, PI Cohen Surface science 161 (1), 39-68, 1985 | 274 | 1985 |
| Modeling for reliability analysis: Markov modeling for reliability, maintainability, safety, and supportability analyses of complex systems J Pukite, P Pukite John Wiley & Sons, 1998 | 169 | 1998 |
| Modeling for reliability analysis: Markov modeling for reliability, maintainability, safety, and supportability analyses of complex systems J Pukite, P Pukite John Wiley & Sons, 1998 | 169 | 1998 |
| Modeling for reliability analysis: Markov modeling for reliability, maintainability, safety, and supportability analyses of complex systems J Pukite, P Pukite John Wiley & Sons, 1998 | 169 | 1998 |
| Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering SS Iyer, JC Tsang, MW Copel, PR Pukite, RM Tromp Applied physics letters 54 (3), 219-221, 1989 | 169 | 1989 |
| Molecular beam epitaxy of metastable, diamond structure SnxGe1−x alloys PR Pukite, A Harwit, SS Iyer Applied physics letters 54 (21), 2142-2144, 1989 | 127 | 1989 |
| Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si PR Pukite, PI Cohen Applied physics letters 50 (24), 1739-1741, 1987 | 118 | 1987 |
| The meandering of steps on GaAs (100) PR Pukite, GS Petrich, S Batra, PI Cohen Journal of Crystal Growth 95 (1-4), 269-272, 1989 | 114 | 1989 |
| The dependence of RHEED oscillations on MBE growth parameters JM Van Hove, PR Pukite, PI Cohen Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 110 | 1985 |
| Suppression of antiphase domains in the growth of GaAs on Ge (100) by molecular beam epitaxy PR Pukite, PI Cohen Journal of Crystal Growth 81 (1-4), 214-220, 1987 | 101 | 1987 |
| Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfaces PI Cohen, PR Pukite, JM Van Hove, CS Lent Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986 | 89 | 1986 |
| RHEED streaks and instrument response JM Van Hove, P Pukite, PI Cohen, CS Lent Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 1 (2 …, 1983 | 68 | 1983 |
| Extrinsic effects in reflection high‐energy electron diffraction patterns from MBE GaAs PR Pukite, JM Van Hove, PI Cohen Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1984 | 46 | 1984 |
| On the origin of RHEED intensity oscillations GS Petrich, PR Pukite, AM Wowchak, GJ Whaley, PI Cohen, AS Arrott Journal of Crystal Growth 95 (1-4), 23-27, 1989 | 45 | 1989 |
| Sensitive reflection high‐energy electron diffraction measurement of the local misorientation of vicinal GaAs surfaces PR Pukite, JM Van Hove, PI Cohen Applied physics letters 44 (4), 456-458, 1984 | 44 | 1984 |
| Properties of diamond structure SnGe films grown by molecular beam epitaxy A Harwit, PR Pukite, J Angilello, SS Iyer Thin Solid Films 184 (1-2), 395-401, 1990 | 40 | 1990 |
| Defect cluster analysis for wafer-scale integration PR Pukite, CL Berman IEEE Transactions on semiconductor manufacturing 3 (3), 128-135, 1990 | 28 | 1990 |
| Layer‐by‐layer evaporation of GaAs (001) JM Van Hove, PR Pukite, GJ Whaley, AM Wowchak, PI Cohen Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 26 | 1985 |
