| Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki physica status solidi c 5 (9), 2966-2968, 2008 | 100 | 2008 |
| Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence T Tanikawa, K Ohnishi, M Kanoh, T Mukai, T Matsuoka Applied Physics Express 11 (3), 031004, 2018 | 88 | 2018 |
| Red to blue wavelength emission of N-polar InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy K Shojiki, T Tanikawa, JH Choi, S Kuboya, T Hanada, R Katayama, ... Applied Physics Express 8 (6), 061005, 2015 | 63 | 2015 |
| Growth of non-polar (1 1 2¯ 0) GaN on a patterned (1 1 0) Si substrate by selective MOVPE T Tanikawa, D Rudolph, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki Journal of Crystal Growth 310 (23), 4999-5002, 2008 | 53 | 2008 |
| Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates CH Chiu, DW Lin, CC Lin, ZY Li, WT Chang, HW Hsu, HC Kuo, TC Lu, ... Applied physics express 4 (1), 012105, 2010 | 50 | 2010 |
| Fabrication and properties of semi‐polar (1‐101) and (11‐22) InGaN/GaN light emitting diodes on patterned Si substrates T Hikosaka, T Tanikawa, Y Honda, M Yamaguchi, N Sawaki physica status solidi c 5 (6), 2234-2237, 2008 | 40 | 2008 |
| Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯ 01) semipolar GaN ZH Wu, T Tanikawa, T Murase, YY Fang, CQ Chen, Y Honda, ... Applied Physics Letters 98 (5), 2011 | 39 | 2011 |
| Optically pumped lasing properties of InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates M Kushimoto, T Tanikawa, Y Honda, H Amano Applied Physics Express 8 (2), 022702, 2015 | 36 | 2015 |
| Control of impurity concentration in N‐polar () GaN grown by metalorganic vapor phase epitaxy T Tanikawa, S Kuboya, T Matsuoka physica status solidi (b) 254 (8), 1600751, 2017 | 30 | 2017 |
| Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth T Aisaka, T Tanikawa, T Kimura, K Shojiki, T Hanada, R Katayama, ... Japanese Journal of Applied Physics 53 (8), 085501, 2014 | 30 | 2014 |
| Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces T Iwabuchi, S Kuboya, T Tanikawa, T Hanada, R Katayama, T Fukuda, ... physica status solidi (a) 214 (9), 1600754, 2017 | 29 | 2017 |
| Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers K Ohnishi, M Kanoh, T Tanikawa, S Kuboya, T Mukai, T Matsuoka Applied Physics Express 10 (10), 101001, 2017 | 25 | 2017 |
| Growth of GaN on Si (111) substrates via a reactive-sputter-deposited AlN intermediate layer T Yamada, T Tanikawa, Y Honda, M Yamaguchi, H Amano Japanese Journal of Applied Physics 52 (8S), 08JB16, 2013 | 25 | 2013 |
| Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN K Ohnishi, S Kuboya, T Tanikawa, T Iwabuchi, K Yamamura, N Hasuike, ... Japanese Journal of Applied Physics 58 (SC), SC1023, 2019 | 23 | 2019 |
| N-polar GaN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching K Prasertsuk, T Tanikawa, T Kimura, S Kuboya, T Suemitsu, T Matsuoka Applied Physics Express 11 (1), 015503, 2017 | 23 | 2017 |
| HVPE growth of semi-polar (1 1 2¯ 2) GaN on GaN template (1 1 3) Si substrate N Suzuki, T Uchida, T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, ... Journal of crystal growth 311 (10), 2875-2878, 2009 | 23 | 2009 |
| Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar GaN/sapphire T Tanikawa, K Shojiki, T Aisaka, T Kimura, S Kuboya, T Hanada, ... Japanese Journal of Applied Physics 53 (5S1), 05FL05, 2014 | 21 | 2014 |
| Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars A Higo, T Kiba, S Chen, Y Chen, T Tanikawa, C Thomas, CY Lee, YC Lai, ... ACS Photonics 4 (7), 1851-1857, 2017 | 18 | 2017 |
| Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates IW Feng, XK Cao, J Li, JY Lin, HX Jiang, N Sawaki, Y Honda, T Tanikawa, ... Applied Physics Letters 98 (8), 2011 | 18 | 2011 |
| Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy M Yang, HS Ahn, T Tanikawa, Y Honda, M Yamaguchi, N Sawaki Journal of crystal growth 311 (10), 2914-2918, 2009 | 18 | 2009 |
