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Geun Hyeong Park
Geun Hyeong Park
確認したメール アドレス: snu.ac.kr - ホームページ
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引用先
引用先
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2204904, 2023
512023
Neuromorphic devices based on fluorite‐structured ferroelectrics
DH Lee, GH Park, SH Kim, JY Park, K Yang, S Slesazeck, T Mikolajick, ...
InfoMat 4 (12), e12380, 2022
232022
Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
Acta Materialia 222, 117405, 2022
192022
Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
Chemical Communications 57 (93), 12452-12455, 2021
192021
Engineering strategies in emerging fluorite-structured ferroelectrics
JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ...
ACS Applied Electronic Materials 4 (4), 1369-1380, 2021
162021
Perspective on ferroelectric devices: lessons from interfacial chemistry
K Yang, SH Kim, HW Jeong, DH Lee, GH Park, Y Lee, MH Park
Chemistry of Materials 35 (6), 2219-2237, 2023
122023
A perspective on the physical scaling down of hafnia-based ferroelectrics
JY Park, DH Lee, GH Park, J Lee, Y Lee, MH Park
Nanotechnology 34 (20), 202001, 2023
92023
Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode
K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ...
Materials Science in Semiconductor Processing 164, 107565, 2023
82023
Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates
K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ...
Composites Part B: Engineering 236, 109824, 2022
72022
Emerging fluorite-structured antiferroelectrics and their semiconductor applications
GH Park, DH Lee, H Choi, T Kwon, YH Cho, SH Kim, MH Park
ACS Applied Electronic Materials 5 (2), 642-663, 2023
52023
Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0. 5Zr0. 5O2 films by adopting oxygen-supplying electrode
Y Lee, SH Kim, HW Jeong, GH Park, J Lee, YY Kim, MH Park
Applied Surface Science 648, 158948, 2024
32024
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2370312, 2023
12023
Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering.
SH Kim, Y Lee, DH Lee, GH Park, HW Jeong, K Yang, YH Cho, YY Kim, ...
Journal of Advanced Ceramics 13 (3), 2024
2024
Semiconductor device
J Kyooho, MH Park, LIM HanJin, GH Park, JY Park
US Patent App. 17/988,135, 2023
2023
Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 film
DH Lee, GH Park, SH Kim, K Yang, J Lee, H Choi, Y Lee, JJ Ryu, JI Lee, ...
IEEE Electron Device Letters, 2023
2023
Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films (vol 222, 117405, 2022)
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
ACTA MATERIALIA 247, 2023
2023
Corrigendum to’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films’[Acta Materialia 222 (2022 …
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
Acta Materialia 247, 118732, 2023
2023
Correction: Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
Chemical Communications 59 (18), 2668-2668, 2023
2023
Front Cover Image
DH Lee, GH Park, SH Kim, JY Park, K Yang, S Slesazeck, T Mikolajick, ...
InfoMat 4 (12), e12389, 2022
2022
Review of the mechanism for Ferroelectric Phase Formation in Fluorite-structure Oxide
GT Yu, GH Park, EB Lee, MH Park
New Physics: Sae Mulli 71 (11), 890-900, 2021
2021
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