Hironori Okumura
Hironori Okumura
Assist. Professor, University of Tsukuba
確認したメール アドレス: u.tsukuba.ac.jp - ホームページ
タイトル
引用先
引用先
Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy
H Okumura, M Kita, K Sasaki, A Kuramata, M Higashiwaki, JS Speck
Applied Physics Express 7 (9), 095501, 2014
722014
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
532017
Reduction of threading dislocation density in 2H-AlN grown on 6H-SiC (0001) by minimizing unintentional active-nitrogen exposure before growth
H Okumura, T Kimoto, J Suda
Applied physics express 4 (2), 025502, 2011
322011
Impact of surface step heights of 6H–SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H–AlN
H Okumura, M Horita, T Kimoto, J Suda
Applied surface science 254 (23), 7858-7860, 2008
292008
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
H Okumura, D Martin, M Malinverni, N Grandjean
Applied Physics Letters 108 (7), 072102, 2016
202016
AlN metal–semiconductor field-effect transistors using Si-ion implantation
H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
182018
MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC
J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ...
Journal of Crystal Growth 487, 50-56, 2018
162018
Growth diagram of N-face GaN (000) grown at high rate by plasma-assisted molecular beam epitaxy
H Okumura, BM McSkimming, T Huault, C Chaix, JS Speck
Applied Physics Letters 104 (1), 012111, 2014
152014
Enhancement of initial layer‐by‐layer growth and reduction of threading dislocation density by optimized Ga pre‐irradiation in molecular‐beam epitaxy of 2H‐AlN on 6H‐SiC (0001)
H Okumura, T Kimoto, J Suda
physica status solidi c 7 (7‐8), 2094-2096, 2010
152010
Over-700-nm critical thickness of AlN grown on 6H-SiC (0001) by molecular beam epitaxy
H Okumura, T Kimoto, J Suda
Applied Physics Express 5 (10), 105502, 2012
122012
Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)
H Okumura, Y Kato, T Oshima, T Palacios
Japanese Journal of Applied Physics 58, SBBD12, 2019
102019
Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps
H Okumura, T Kimoto, J Suda
Applied Physics Letters 105 (7), 071603, 2014
92014
Observation of novel defect structure in 2H‐AlN grown on 6H‐SiC (0001) substrates with 3‐bilayer‐height step‐and‐terrace structures
H Okumura, M Horita, T Kimoto, J Suda
physica status solidi (a) 206 (6), 1187-1189, 2009
82009
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
J Lemettinen, H Okumura, I Kim, C Kauppinen, T Palacios, S Suihkonen
Journal of Crystal Growth 487, 12-16, 2018
72018
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
A Uedono, M Malinverni, D Martin, H Okumura, S Ishibashi, N Grandjean
Journal of Applied Physics 119 (24), 245702, 2016
72016
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
H Okumura, D Martin, N Grandjean
Applied Physics Letters 109 (25), 252101, 2016
52016
In situ gravimetric monitoring of thermal decomposition and hydrogen etching rates of 6H-SiC (0001) Si face
K Akiyama, Y Ishii, S Abe, H Murakami, Y Kumagai, H Okumura, T Kimoto, ...
Japanese Journal of Applied Physics 48 (9R), 095505, 2009
52009
N-Polar Polarization-Doped Field-Effect Transistor based on AlGaN/AlN with drain current over 100 mA/mm
J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios
IEEE Electron Device Letters 40 (8), 1245-1248, 2019
42019
N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications
J Lemettinen, H Okumura, T Palacios, S Suihkonen
Applied Physics Express 11 (10), 101002, 2018
42018
AlN/GaN short-period superlattice coherently grown on 6H-SiC (0001) substrates by molecular beam epitaxy
R Kikuchi, H Okumura, M Kaneko, T Kimoto, J Suda
Applied Physics Express 5 (5), 051002, 2012
42012
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