| Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy H Okumura, M Kita, K Sasaki, A Kuramata, M Higashiwaki, JS Speck Applied Physics Express 7 (9), 095501, 2014 | 168 | 2014 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 162 | 2017 |
| AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ... Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018 | 55 | 2018 |
| Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination H Okumura, T Tanaka Japanese Journal of Applied Physics 58, 120902, 2019 | 48 | 2019 |
| Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010) H Okumura, Y Kato, T Oshima, T Palacios Japanese Journal of Applied Physics 58, SBBD12, 2019 | 44 | 2019 |
| Reduction of threading dislocation density in 2H-AlN grown on 6H-SiC (0001) by minimizing unintentional active-nitrogen exposure before growth H Okumura, T Kimoto, J Suda Applied physics express 4 (2), 025502, 2011 | 43 | 2011 |
| N-Polar Polarization-Doped Field-Effect Transistor based on AlGaN/AlN with drain current over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios IEEE Electron Device Letters 40 (8), 1245-1248, 2019 | 36 | 2019 |
| MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ... Journal of Crystal Growth 487, 50-56, 2018 | 35 | 2018 |
| Over-700-nm critical thickness of AlN grown on 6H-SiC (0001) by molecular beam epitaxy H Okumura, T Kimoto, J Suda Applied Physics Express 5 (10), 105502, 2012 | 35 | 2012 |
| Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy H Okumura, D Martin, M Malinverni, N Grandjean Applied physics letters 108 (7), 2016 | 31 | 2016 |
| Impact of surface step heights of 6H–SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H–AlN H Okumura, M Horita, T Kimoto, J Suda Applied Surface Science 254 (23), 7858-7860, 2008 | 31 | 2008 |
| Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy H Okumura, BM McSkimming, T Huault, C Chaix, JS Speck Applied Physics Letters 104 (1), 2014 | 25 | 2014 |
| MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality J Lemettinen, H Okumura, I Kim, C Kauppinen, T Palacios, S Suihkonen Journal of Crystal Growth 487, 12-16, 2018 | 23 | 2018 |
| Enhancement of initial layer‐by‐layer growth and reduction of threading dislocation density by optimized Ga pre‐irradiation in molecular‐beam epitaxy of 2H‐AlN on 6H‐SiC (0001) H Okumura, T Kimoto, J Suda physica status solidi c 7 (7‐8), 2094-2096, 2010 | 22 | 2010 |
| N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications J Lemettinen, H Okumura, T Palacios, S Suihkonen Applied Physics Express 11 (10), 101002, 2018 | 20 | 2018 |
| Optical properties of highly strained AlN coherently grown on 6H-SiC (0001) M Kaneko, H Okumura, R Ishii, M Funato, Y Kawakami, T Kimoto, J Suda Applied physics express 6 (6), 062604, 2013 | 17 | 2013 |
| Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN H Okumura, D Martin, N Grandjean Applied physics letters 109 (25), 2016 | 15 | 2016 |
| Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps H Okumura, T Kimoto, J Suda Applied Physics Letters 105 (7), 2014 | 15 | 2014 |
| Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam A Uedono, M Malinverni, D Martin, H Okumura, S Ishibashi, N Grandjean Journal of applied physics 119 (24), 2016 | 12 | 2016 |
| Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution H Okumura Japanese Journal of Applied Physics 58 (2), 026502, 2019 | 11 | 2019 |
Tsunenobu KimotoKyoto University確認したメール アドレス: kyoto-u.ac.jp
