| Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono nature 432 (7016), 488-492, 2004 | 8649 | 2004 |
| Amorphous Oxide And Thin Film Transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 10/592,431, 2007 | 3890 | 2007 |
| Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya US Patent 7,061,014, 2006 | 3849 | 2006 |
| Display H Kumomi, H Hosono, T Kamiya, K Nomura US Patent 7,791,072, 2010 | 3803 | 2010 |
| Integrated circuits utilizing amorphous oxides K Abe, H Hosono, T Kamiya, K Nomura US Patent 7,863,611, 2011 | 3775 | 2011 |
| Light-emitting device T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,872,259, 2011 | 3770 | 2011 |
| Amorphous oxide and field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent App. 11/269,600, 2006 | 3766 | 2006 |
| Field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,868,326, 2011 | 3756 | 2011 |
| Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,829,444, 2010 | 3753 | 2010 |
| Sensor and image pickup device K Saito, H Hosono, T Kamiya, K Nomura US Patent 7,453,065, 2008 | 3736 | 2008 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent 10,032,930, 2018 | 3710 | 2018 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 12/504,158, 2009 | 3707 | 2009 |
| Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono Science 300 (5623), 1269-1272, 2003 | 3046 | 2003 |
| Present status of amorphous In–Ga–Zn–O thin-film transistors T Kamiya, K Nomura, H Hosono Science and Technology of Advanced Materials, 2010 | 2275* | 2010 |
| Iron-based layered superconductor: LaOFeP Y Kamihara, H Hiramatsu, M Hirano, R Kawamura, H Yanagi, T Kamiya, ... Journal of the American Chemical Society 128 (31), 10012-10013, 2006 | 1953 | 2006 |
| Amorphous oxide semiconductors for high-performance flexible thin-film transistors K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono Japanese journal of applied physics 45 (5S), 4303, 2006 | 1497 | 2006 |
| High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ... Applied physics letters 89 (11), 2006 | 1424 | 2006 |
| Material characteristics and applications of transparent amorphous oxide semiconductors T Kamiya, H Hosono NPG Asia Materials 2 (1), 15-22, 2010 | 1040 | 2010 |
| Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono Applied Physics Letters 85 (11), 1993-1995, 2004 | 969 | 2004 |
| Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,601,984, 2009 | 929 | 2009 |
Hidenori HiramatsuTokyo Institute of TechnologyVerified email at mces.titech.ac.jp
