| Light emitting diodes including modifications for light extraction DB Slater Jr, RC Glass, CM Swoboda, B Keller, J Ibbetson, B Thibeault, ... US Patent 6,791,119, 2004 | 663 | 2004 |
| SiC seeded crystal growth RC Glass, D Henshall, VF Tsvetkov, CH Carter Jr physica status solidi (b) 202 (1), 149-162, 1997 | 253 | 1997 |
| The status of SiC bulk growth from an industrial point of view M St G, RC Glass, HM Hobgood, VF Tsvetkov, M Brady, D Henshall, ... Journal of Crystal Growth 211 (1-4), 325-332, 2000 | 196 | 2000 |
| Semi‐insulating 6H–SiC grown by physical vapor transport HMD Hobgood, RC Glass, G Augustine, RH Hopkins, J Jenny, ... Applied physics letters 66 (11), 1364-1366, 1995 | 184 | 1995 |
| Progress in SiC: from material growth to commercial device development CH Carter Jr, VF Tsvetkov, RC Glass, D Henshall, M Brady, M St G, ... Materials Science and Engineering: B 61, 1-8, 1999 | 153 | 1999 |
| Light emitting diodes including pedestals DB Slater Jr, RC Glass, CM Swoboda, B Keller, J Ibbetson, B Thibeault, ... US Patent 7,026,659, 2006 | 119 | 2006 |
| Silicon carbide for power devices JW Palmour, R Singh, RC Glass, O Kordina, CH Carter Proceedings of 9th International Symposium on Power Semiconductor Devices …, 1997 | 111 | 1997 |
| Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC JR Jenny, J Skowronski, WC Mitchel, HM Hobgood, RC Glass, ... Applied Physics Letters 68 (14), 1963-1965, 1996 | 104 | 1996 |
| Status of large diameter SiC crystal growth for electronic and optical applications H McD. Hobgood, MF Brady, WH Brixius, G Fechko, RC Glass, ... Materials Science Forum 338, 3-8, 2000 | 102 | 2000 |
| On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium JR Jenny, M Skowronski, WC Mitchel, HM Hobgood, RC Glass, ... Journal of applied physics 78 (6), 3839-3842, 1995 | 102 | 1995 |
| 4H-SiC MESFET's with 42 GHz fmax S Sriram, G Augustine, AA Burk, RC Glass, HM Hobgood, PA Orphanos, ... IEEE Electron Device Letters 17 (7), 369-371, 1996 | 100 | 1996 |
| Structural macro-defects in 6H-SiC wafers RC Glass, LO Kjellberg, VF Tsvetkov, JE Sundgren, E Janzén Journal of crystal growth 132 (3-4), 504-512, 1993 | 99 | 1993 |
| Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods RP LeToquin, T Tong, RC Glass US Patent 8,921,875, 2014 | 93 | 2014 |
| High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method JR Jenny, SG Müller, A Powell, VF Tsvetkov, HM Hobgood, RC Glass, ... Journal of electronic materials 31, 366-369, 2002 | 89 | 2002 |
| Progress in the industrial production of SiC substrates for semiconductor devices M St G, RC Glass, HM Hobgood, VF Tsvetkov, M Brady, D Henshall, ... Materials Science and Engineering: B 80 (1-3), 327-331, 2001 | 82 | 2001 |
| Growth of 3CSiC on on-axis Si (100) substrates by chemical vapor deposition O Kordina, LO Björketun, A Henry, C Hallin, RC Glass, L Hultman, ... Journal of crystal growth 154 (3-4), 303-314, 1995 | 76 | 1995 |
| Method of forming platinum ohmic contact to p-type silicon carbide RC Glass, JW Palmour, RF Davis, LS Porter US Patent 5,409,859, 1995 | 75 | 1995 |
| Growth of colorless silicon carbide crystals CH Carter, VF Tsvetkov, RC Glass US Patent 5,718,760, 1998 | 73 | 1998 |
| Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition BR Stoner, C Kao, DM Malta, RC Glass Applied physics letters 62 (19), 2347-2349, 1993 | 72 | 1993 |
| Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface RC Glass, LM Spellman, S Tanaka, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 72 | 1992 |
