| Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes D Schiavon, M Binder, M Peter, B Galler, P Drechsel, F Scholz physica status solidi (b) 250 (2), 283-290, 2013 | 142 | 2013 |
| Elimination of trench defects and V-pits from InGaN/GaN structures J Smalc-Koziorowska, E Grzanka, R Czernecki, D Schiavon, ... Applied Physics Letters 106 (10), 2015 | 53 | 2015 |
| Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices D Schiavon, M Binder, A Loeffler, M Peter Applied Physics Letters 102 (11), 2013 | 32 | 2013 |
| Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells R Czernecki, E Grzanka, J Smalc-Koziorowska, S Grzanka, D Schiavon, ... Journal of Crystal Growth 414, 38-41, 2015 | 28 | 2015 |
| Lateral charge carrier diffusion in InGaN quantum wells J Danhof, HM Solowan, UT Schwarz, A Kaneta, Y Kawakami, D Schiavon, ... physica status solidi (b) 249 (3), 480-484, 2012 | 26 | 2012 |
| review on optimization and current status of (Al, In) GaN superluminescent diodes A Kafar, S Stanczyk, D Schiavon, T Suski, P Perlin ECS Journal of Solid State Science and Technology 9 (1), 015010, 2019 | 21 | 2019 |
| GaN laser diode technology for visible-light communications SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Electronics 11 (9), 1430, 2022 | 15 | 2022 |
| Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium D Schiavon, E Litwin-Staszewska, R Jakieła, S Grzanka, P Perlin Materials 14 (2), 354, 2021 | 13 | 2021 |
| Role of dislocations in nitride laser diodes with different indium content A Bojarska-Cieślińska, Ł Marona, J Smalc-Koziorowska, S Grzanka, ... Scientific Reports 11 (1), 21, 2021 | 11 | 2021 |
| Optoelectronic component and method for the production thereof C Leirer, T Meyer, M Peter, J Off, J Hertkorn, A Loeffler, A Walter, ... US Patent 9,502,611, 2016 | 11 | 2016 |
| Electrical transport properties of highly doped N-type GaN materials L Konczewicz, E Litwin-Staszewska, M Zajac, H Turski, M Bockowski, ... Semiconductor Science and Technology 37 (5), 055012, 2022 | 10 | 2022 |
| Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry D Schiavon, R Mroczyński, A Kafar, G Kamler, I Levchenko, S Najda, ... Materials 14 (23), 7364, 2021 | 9 | 2021 |
| Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes A Bojarska, J Goss, S Stanczyk, I Makarowa, D Schiavon, R Czernecki, ... Superlattices and Microstructures 116, 114-121, 2018 | 9 | 2018 |
| Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes A Kafar, R Ishii, K Gibasiewicz, Y Matsuda, S Stanczyk, D Schiavon, ... Optics Express 28 (15), 22524-22539, 2020 | 7 | 2020 |
| Analysis of the green gap problem in III-nitride LEDs D Schiavon Universität Ulm, 2016 | 7 | 2016 |
| Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN L Marona, J Smalc-Koziorowska, E Grzanka, M Sarzynski, T Suski, ... Semiconductor Science and Technology 31 (3), 035001, 2016 | 7 | 2016 |
| Influence of substrate misorientation on the emission and waveguiding properties of a blue (In, Al, Ga) N laser-like structure studied by synchrotron radiation microbeam X-ray … A Kafar, A Sakaki, R Ishii, S Stanczyk, K Gibasiewicz, Y Matsuda, ... Photonics Research 9 (3), 299-307, 2021 | 6 | 2021 |
| Surface photochemical corrosion as a mechanism for fast degradation of InGaN UV laser diodes L Marona, P Wisniewski, M Wzorek, J Smalc-Koziorowska, S Grzanka, ... ACS Applied Materials & Interfaces 12 (46), 52089-52094, 2020 | 6 | 2020 |
| GaN laser diodes for quantum sensors, clocks and systems SP Najda, P Perlin, T Suski, L Marona, S Stanczyk, P Wisniewski, ... Emerging Imaging and Sensing Technologies for Security and Defence III; and …, 2018 | 6 | 2018 |
| GaN laser diodes for high-power optical integration and quantum technologies SP Najda, P Perlin, T Suski, L Marona, S Stanczyk, P Wisniewski, ... Gallium Nitride Materials and Devices XIII 10532, 72-78, 2018 | 6 | 2018 |
