Shinichi Takagi
Shinichi Takagi
確認したメール アドレス: ee.t.u-tokyo.ac.jp
タイトル
引用先
引用先
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2357-2362, 1994
14301994
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
S Takagi, JL Hoyt, JJ Welser, JF Gibbons
Journal of Applied Physics 80 (3), 1567-1577, 1996
5731996
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
T Tezuka, N Sugiyama, S Takagi
Applied Physics Letters 79 (12), 1798-1800, 2001
3852001
Carrier-transport-enhanced channel CMOS for improved power consumption and performance
S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ...
IEEE Transactions on Electron Devices 55 (1), 21-39, 2007
3822007
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2363-2368, 1994
3721994
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
J Welser, JL Hoyt, SI Takagi, JF Gibbons
Proceedings of 1994 IEEE International Electron Devices Meeting, 373-376, 1994
3581994
Evidence of low interface trap density in metal-oxide-semiconductor structures fabricated by thermal oxidation
H Matsubara, T Sasada, M Takenaka, S Takagi
Applied physics letters 93 (3), 032104, 2008
3572008
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, S Takagi
Applied Physics Letters 83 (17), 3516-3518, 2003
3162003
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
T Mizuno, S Takagi, N Sugiyama, H Satake, A Kurobe, A Toriumi
IEEE Electron Device Letters 21 (5), 230-232, 2000
2892000
Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm
K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi
Digest. International Electron Devices Meeting,, 47-50, 2002
2682002
A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs
T Tezuka, N Sugiyama, T Mizuno, M Suzuki, S Takagi
Japanese Journal of Applied Physics 40 (4S), 2866, 2001
2612001
Bending experiment on pentacene field-effect transistors on plastic films
T Sekitani, Y Kato, S Iba, H Shinaoka, T Someya, T Sakurai, S Takagi
Applied Physics Letters 86 (7), 073511, 2005
2542005
High-Mobility Ge pMOSFET With 1-nm EOTGate Stack Fabricated by Plasma Post Oxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 59 (2), 335-341, 2011
251*2011
Semiconductor device
N Sugiyama, T Tezuka, T Mizuno, S Takagi
US Patent 6,774,390, 2004
2432004
Semiconductor device
S Takagi
US Patent 6,339,232, 2002
2382002
Method of manufacturing a substrate using an SiGe layer
N Sugiyama, A Kurobe, T Tezuka, T Mizuno, S Takagi
US Patent 6,607,948, 2003
2012003
Experimental evidence of inelastic tunneling in stress-induced leakage current
S Takagi, N Yasuda, A Toriumi
IEEE Transactions on Electron Devices 46 (2), 335-341, 1999
2011999
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT UsingGate Stacks Fabricated by Plasma Postoxidation
R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi
IEEE transactions on electron devices 60 (3), 927-934, 2013
1842013
gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
Applied Physics Letters 98 (11), 112902, 2011
1782011
Quantitative understanding of inversion-layer capacitance in Si MOSFET's
S Takagi, A Toriumi
IEEE Transactions on Electron Devices 42 (12), 2125-2130, 1995
1771995
現在システムで処理を実行できません。しばらくしてからもう一度お試しください。
論文 1–20