| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 768 | 2016 |
| On the structural origins of ferroelectricity in HfO2 thin films X Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeau Applied Physics Letters 106 (16), 2015 | 615 | 2015 |
| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 072006, 2015 | 552 | 2015 |
| Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013 | 494 | 2013 |
| Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014 | 392 | 2014 |
| Wake-up effects in Si-doped hafnium oxide ferroelectric thin films D Zhou, J Xu, Q Li, Y Guan, F Cao, X Dong, J Müller, T Schenk, ... Applied Physics Letters 103 (19), 2013 | 380 | 2013 |
| Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016 | 379 | 2016 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 338 | 2017 |
| Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ... Inorganic chemistry 57 (5), 2752-2765, 2018 | 316 | 2018 |
| A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017 | 306 | 2017 |
| Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015 | 251 | 2015 |
| Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ... Applied Physics Letters 104 (9), 2014 | 232 | 2014 |
| About the deformation of ferroelectric hystereses T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ... Applied Physics Reviews 1 (4), 041103, 2014 | 211 | 2014 |
| Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films S Starschich, T Schenk, U Schroeder, U Boettger Applied Physics Letters 110 (18), 2017 | 188 | 2017 |
| Electric field cycling behavior of ferroelectric hafnium oxide T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick ACS applied materials & interfaces 6 (22), 19744-19751, 2014 | 188 | 2014 |
| Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ... Advanced Materials 26 (48), 8198-8202, 2014 | 184 | 2014 |
| Si doped hafnium oxide—A “fragile” ferroelectric system C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ... Advanced Electronic Materials 3 (10), 1700131, 2017 | 177 | 2017 |
| Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 ED Grimley, T Schenk, T Mikolajick, U Schroeder, JM LeBeau Advanced Materials Interfaces 5 (5), 1701258, 2018 | 156 | 2018 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 148 | 2015 |
| Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 143* | 2013 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden確認したメール アドレス: namlab.com
