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Yukinori Ono
Yukinori Ono
Research Institute of Electronics, Shizuoka University
Verified email at shizuoka.ac.jp
Title
Cited by
Cited by
Year
Ultimately thin double-gate SOI MOSFETs
T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...
IEEE transactions on electron devices 50 (3), 830-838, 2003
2982003
Silicon single-electron devices
Y Takahashi, Y Ono, A Fujiwara, H Inokawa
Journal of physics: Condensed matter 14 (39), R995, 2002
2332002
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara, K Nishiguchi, Y Ono
Applied Physics Letters 92 (4), 2008
2202008
Valley polarization in Si (100) at zero magnetic field
K Takashina, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama
Physical review letters 96 (23), 236801, 2006
1762006
Pauli-spin-blockade transport through a silicon double quantum dot
HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ...
Physical Review B 77 (7), 073310, 2008
1722008
Manipulation and detection of single electrons for future information processing
Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi
Journal of Applied Physics 97 (3), 2005
1652005
Fabrication method for IC-oriented Si single-electron transistors
Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ...
IEEE Transactions on Electron Devices 47 (1), 147-153, 2000
1512000
Current quantization due to single-electron transfer in Si-wire charge-coupled devices
A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi
Applied physics letters 84 (8), 1323-1325, 2004
1462004
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 2007
1442007
Single-electron transport through single dopants in a dopant-rich environment
M Tabe, D Moraru, M Ligowski, M Anwar, R Jablonski, Y Ono, T Mizuno
Physical review letters 105 (1), 016803, 2010
1322010
Si complementary single-electron inverter with voltage gain
Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ...
Applied Physics Letters 76 (21), 3121-3123, 2000
1282000
Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate
Y Takahashi, T Furuta, Y Ono, T Ishiyama, MTM Tabe
Japanese journal of applied physics 34 (2S), 950, 1995
1171995
Metal− semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation
A Vijayaraghavan, K Kanzaki, S Suzuki, Y Kobayashi, H Inokawa, Y Ono, ...
Nano letters 5 (8), 1575-1579, 2005
1082005
Scanning-tunneling-microscopy observation of thermal oxide growth on Si (111) 7× 7 surfaces
Y Ono, M Tabe, H Kageshima
Physical Review B 48 (19), 14291, 1993
1061993
Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi
Applied physics letters 88 (18), 2006
882006
Electron pump by a combined single-electron/field-effect-transistor structure
Y Ono, Y Takahashi
Applied Physics Letters 82 (8), 1221-1223, 2003
862003
Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
D Moraru, Y Ono, H Inokawa, M Tabe
Physical Review B 76 (7), 075332, 2007
832007
Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic
Y Ono, H Inokawa, Y Takahashi
IEEE Transactions on nanotechnology 1 (2), 93-99, 2002
762002
Thermal agglomeration of single-crystalline Si layer on buried in ultrahigh vacuum
R Nuryadi, Y Ishikawa, Y Ono, M Tabe
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
742002
Thermal agglomeration of thin single crystal Si on SiO2 in vacuum
Y Ono, M Nagase, MTM Tabe, YTY Takahashi
Japanese journal of applied physics 34 (4R), 1728, 1995
631995
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