| Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ... 2D Materials 4 (2), 021023, 2017 | 117 | 2017 |
| Isotope engineering of van der Waals interactions in hexagonal boron nitride TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ... Nature materials 17 (2), 152-158, 2018 | 114 | 2018 |
| Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ... Physical review letters 117 (9), 097402, 2016 | 103 | 2016 |
| A simple approach to the fabrication of graphene-carbon nanotube hybrid films on copper substrate by chemical vapor deposition N Van Chuc, CT Thanh, N Van Tu, VTQ Phuong, PV Thang, NTT Tam Journal of Materials Science & Technology 31 (5), 479-483, 2015 | 64 | 2015 |
| Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, V Jacques, R Cuscó, L Artús, B Gil Physical review B 95 (4), 045207, 2017 | 41 | 2017 |
| Phonon symmetries in hexagonal boron nitride probed by incoherent light emission TQP Vuong, G Cassabois, P Valvin, V Jacques, A van Der Lee, A Zobelli, ... 2D Materials 4 (1), 011004, 2016 | 39 | 2016 |
| Exciton-phonon interaction in the strong-coupling regime in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, S Liu, JH Edgar, B Gil Physical Review B 95 (20), 201202, 2017 | 33 | 2017 |
| Towards p-type conduction in hexagonal boron nitride: doping study and electrical measurements analysis of HBN/algan heterojunctions A Mballo, A Srivastava, S Sundaram, P Vuong, S Karrakchou, Y Halfaya, ... Nanomaterials 11 (1), 211, 2021 | 16 | 2021 |
| Novel scalable transfer approach for discrete III‐nitride devices using wafer‐scale patterned H‐BN/sapphire substrate for pick‐and‐place applications T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1900164, 2019 | 16 | 2019 |
| Influence of sapphire substrate orientation on the van der waals epitaxy of III-nitrides on 2D hexagonal boron nitride: implication for optoelectronic devices P Vuong, S Sundaram, V Ottapilakkal, G Patriarche, L Largeau, ... ACS Applied Nano Materials 5 (1), 791-800, 2022 | 15 | 2022 |
| Control of the mechanical adhesion of III–V materials grown on layered h-BN P Vuong, S Sundaram, A Mballo, G Patriarche, S Leone, F Benkhelifa, ... ACS Applied Materials & Interfaces 12 (49), 55460-55466, 2020 | 15 | 2020 |
| Single crystalline boron rich B (Al) N alloys grown by MOVPE P Vuong, A Mballo, S Sundaram, G Patriarche, Y Halfaya, S Karrakchou, ... Applied Physics Letters 116 (4), 2020 | 15 | 2020 |
| Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S Matta, J Brault, M Korytov, TQP Vuong, C Chaix, M Al Khalfioui, ... Journal of Crystal Growth 499, 40-46, 2018 | 15 | 2018 |
| MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics S Sundaram, P Vuong, A Mballo, T Ayari, S Karrakchou, G Patriarche, ... APL Materials 9 (6), 2021 | 14 | 2021 |
| Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Scientific Reports 10 (1), 21709, 2020 | 13 | 2020 |
| Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions JH Kang, H Shin, KS Kim, MK Song, D Lee, Y Meng, C Choi, JM Suh, ... Nature Materials 22 (12), 1470-1477, 2023 | 11 | 2023 |
| Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer S Karrakchou, S Sundaram, R Gujrati, P Vuong, A Mballo, HE Adjmi, ... ACS Applied Electronic Materials 3 (6), 2614-2621, 2021 | 9 | 2021 |
| Crystalline quality and surface morphology improvement of face-to-face annealed MBE-grown AlN on h-BN A Zaiter, A Michon, M Nemoz, A Courville, P Vennéguès, V Ottapilakkal, ... Materials 15 (23), 8602, 2022 | 8 | 2022 |
| Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors A Mballo, A Ahaitouf, S Sundaram, A Srivastava, V Ottapilakkal, R Gujrati, ... ACS omega 7 (1), 804-809, 2021 | 7 | 2021 |
| Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE I Daldoul, S Othmani, A Mballo, P Vuong, JP Salvestrini, N Chaaben Materials Science in Semiconductor Processing 132, 105909, 2021 | 7 | 2021 |
