| Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si DT Shivakumar, T Knežević, LK Nanver Journal of Materials Science: Materials in Electronics 32 (6), 7123-7135, 2021 | 9 | 2021 |
| Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications G Gupta, S D Thammaiah, LK Nanver, RJE Hueting Journal of Applied Physics 128 (5), 2020 | 8 | 2020 |
| PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility TA Lis Nanver, Xingyu Liu, Tihomir Knezevic, Kevin Batenberg Solid State Electronics, 2020 | 4* | 2020 |
| Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes SD Thammaiah, JL Hansen, LK Nanver China Semiconductor Technology International Conference 2019, CSTIC 2019 …, 2019 | 4 | 2019 |
| In search of a hole inversion layer in Pd/MoOx/Si diodes through I-V characterization using dedicated ring-shaped test structures G Gupta, SD Thammaiah, RJ Hueting, LK Nanver ICMTS Conference 2019 Proceedings, 2019 | 4 | 2019 |
| On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology LK Nanver, T Knezevic, X Liu, SD Thammaiah, M Krakers Journal of nanoscience and nanotechnology 21 (4), 2472-2482, 2021 | 2 | 2021 |
| Comparison of Selective Deposition Techiques for Fabricating p+n Ultrashallow Silicon Diodes X Liu, SD Thammaiah, TLM Scholtes, LK Nanver Proceedings of ICT. OPEN-2016, Semiconductor Advances for Future Electronics …, 2016 | 2 | 2016 |
Lis Nanver確認したメール アドレス: utwente.nl
