| Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices N Fujimura, T Ishida, T Yoshimura, T Ito Applied physics letters 69 (7), 1011-1013, 1996 | 392 | 1996 |
| Ferroelectric properties of epitaxial films for ferroelectric-gate field-effect transistors D Ito, N Fujimura, T Yoshimura, T Ito Journal of Applied Physics 93 (9), 5563-5567, 2003 | 134 | 2003 |
| Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices N Fujimura, S Azuma, N Aoki, T Yoshimura, T Ito Journal of applied physics 80 (12), 7084-7088, 1996 | 126 | 1996 |
| Raman scattering studies on multiferroic YMnO3 H Fukumura, S Matsui, H Harima, K Kisoda, T Takahashi, T Yoshimura, ... Journal of Physics: Condensed Matter 19 (36), 365239, 2007 | 92 | 2007 |
| Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in structure T Yoshimura, N Fujimura, D Ito, T Ito Journal of Applied Physics 87 (7), 3444-3449, 2000 | 88 | 2000 |
| Direct piezoelectric properties of (100) and (111) BiFeO3 epitaxial thin films K Ujimoto, T Yoshimura, A Ashida, N Fujimura Applied Physics Letters 100 (10), 2012 | 79 | 2012 |
| Ferroelectric properties of c-oriented films deposited on Si substrates T Yoshimura, N Fujimura, T Ito Applied physics letters 73 (3), 414-416, 1998 | 79 | 1998 |
| Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films T Yoshimura, S Murakami, K Wakazono, K Kariya, N Fujimura Applied Physics Express 6 (5), 051501, 2013 | 66 | 2013 |
| Ferromagnetic and ferroelectric behaviors of -site substituted -based epitaxial thin films N Fujimura, H Sakata, D Ito, T Yoshimura, T Yokota, T Ito Journal of applied physics 93 (10), 6990-6992, 2003 | 61 | 2003 |
| Growth and properties of (001) epitaxial films T Yoshimura, S Trolier-McKinstry Applied Physics Letters 81 (11), 2065-2066, 2002 | 60 | 2002 |
| YMnO3 thin films prepared from solutions for non volatile memory devices N Fujimura, H Tanaka, H Kitahata, K Tadanaga, T Yoshimura, TIT Ito, ... Japanese journal of applied physics 36 (12A), L1601, 1997 | 51 | 1997 |
| Influence of Schottky and Poole–Frenkel emission on the retention property of -based metal/ferroelectric/insulator/semiconductor capacitors D Ito, N Fujimura, T Yoshimura, T Ito Journal of Applied Physics 94 (6), 4036-4041, 2003 | 44 | 2003 |
| Systematic study of photoluminescence enhancement in monolayer molybdenum disulfide by acid treatment D Kiriya, Y Hijikata, J Pirillo, R Kitaura, A Murai, A Ashida, T Yoshimura, ... Langmuir 34 (35), 10243-10249, 2018 | 40 | 2018 |
| Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition Y Kakehi, K Satoh, T Yotsuya, S Nakao, T Yoshimura, A Ashida, ... Journal of applied physics 97 (8), 2005 | 37 | 2005 |
| Direct piezoelectric properties of Mn-doped ZnO epitaxial films T Yoshimura, H Sakiyama, T Oshio, A Ashida, N Fujimura Japanese journal of applied physics 49 (2R), 021501, 2010 | 35 | 2010 |
| Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor T Fukushima, T Yoshimura, K Masuko, K Maeda, A Ashida, N Fujimura Japanese journal of applied physics 47 (12R), 8874, 2008 | 35 | 2008 |
| Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO(0001) single-crystal substrates K Masuko, A Ashida, T Yoshimura, N Fujimura Journal of Applied Physics 103 (4), 043714-043714-4, 2008 | 35 | 2008 |
| Pulsed-laser-deposited YMnO3 epitaxial films with square polarization-electric field hysteresis loop and low-temperature growth N Shigemitsu, H Sakata, D Ito, T Yoshimura, A Ashida, N Fujimura Japanese journal of applied physics 43 (9S), 6613, 2004 | 34 | 2004 |
| Piezoelectric films for MEMS applications F Xu, RA Wolf, T Yoshimura, S Trolier-McKinstry Proceedings. 11th International Symposium on Electrets, 386-396, 2002 | 31 | 2002 |
| Polarization hysteresis loops of ferroelectric gate capacitors measured by sawyer-tower circuit T Yoshimura, N Fujimura Japanese journal of applied physics 42 (9S), 6011, 2003 | 29 | 2003 |
Norifumi FujimuraOsaka Metropolitan University確認したメール アドレス: pe.osakafu-u.ac.jp
