| Ferroelectric FET analog synapse for acceleration of deep neural network training M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta 2017 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2017 | 303 | 2017 |
| The era of hyper-scaling in electronics S Salahuddin, K Ni, S Datta Nature Electronics 1 (8), 442-450, 2018 | 239 | 2018 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018 | 172 | 2018 |
| Ferroelectric ternary content-addressable memory for one-shot learning K Ni, X Yin, AF Laguna, S Joshi, S Dünkel, M Trentzsch, J Müller, S Beyer, ... Nature Electronics 2 (11), 521-529, 2019 | 120 | 2019 |
| A circuit compatible accurate compact model for ferroelectric-FETs K Ni, M Jerry, JA Smith, S Datta 2018 IEEE Symposium on VLSI Technology, 131-132, 2018 | 103 | 2018 |
| A ferroelectric field effect transistor based synaptic weight cell M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ... Journal of Physics D: Applied Physics 51 (43), 434001, 2018 | 89 | 2018 |
| SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018 | 73 | 2018 |
| Time-resolved measurement of negative capacitance P Sharma, J Zhang, K Ni, S Datta IEEE Electron Device Letters 39 (2), 272-275, 2017 | 73 | 2017 |
| Exploiting hybrid precision for training and inference: A 2T-1FeFET based analog synaptic weight cell X Sun, P Wang, K Ni, S Datta, S Yu 2018 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2018 | 69 | 2018 |
| Computing with ferroelectric FETs: Devices, models, systems, and applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018 | 62 | 2018 |
| An ultra-dense 2FeFET TCAM design based on a multi-domain FeFET model X Yin, K Ni, D Reis, S Datta, M Niemier, XS Hu IEEE Transactions on Circuits and Systems II: Express Briefs 66 (9), 1577-1581, 2018 | 53 | 2018 |
| Write disturb in ferroelectric FETs and its implication for 1T-FeFET AND memory arrays K Ni, X Li, JA Smith, M Jerry, S Datta IEEE Electron Device Letters 39 (11), 1656-1659, 2018 | 47 | 2018 |
| Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO AK Saha, K Ni, S Dutta, S Datta, S Gupta Applied Physics Letters 114 (20), 202903, 2019 | 42 | 2019 |
| Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs K Ni, W Chakraborty, J Smith, B Grisafe, S Datta 2019 Symposium on VLSI Technology, T40-T41, 2019 | 40 | 2019 |
| Bias dependence of single-event upsets in 16 nm FinFET D-flip-flops B Narasimham, S Hatami, A Anvar, DM Harris, A Lin, JK Wang, ... IEEE Transactions on Nuclear Science 62 (6), 2578-2584, 2015 | 39 | 2015 |
| Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array D Reis, K Ni, W Chakraborty, X Yin, M Trentzsch, SD Dünkel, T Melde, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 37 | 2019 |
| In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018 | 33 | 2018 |
| FeCAM: A universal compact digital and analog content addressable memory using ferroelectric X Yin, C Li, Q Huang, L Zhang, M Niemier, XS Hu, C Zhuo, K Ni IEEE Transactions on Electron Devices 67 (7), 2785-2792, 2020 | 32 | 2020 |
| Supervised learning in all fefet-based spiking neural network: Opportunities and challenges S Dutta, C Schafer, J Gomez, K Ni, S Joshi, S Datta Frontiers in Neuroscience 14, 634, 2020 | 30 | 2020 |
| Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies H Zhang, H Jiang, TR Assis, DR Ball, K Ni, JS Kauppila, RD Schrimpf, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 5C-3-1-5C-3-5, 2016 | 30 | 2016 |
Suman DattaStinson Chair Professor在 nd.edu 的电子邮件经过验证
