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Kai Ni
标题
引用次数
引用次数
年份
Ferroelectric FET analog synapse for acceleration of deep neural network training
M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2017
3032017
The era of hyper-scaling in electronics
S Salahuddin, K Ni, S Datta
Nature Electronics 1 (8), 442-450, 2018
2392018
Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance
K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ...
IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018
1722018
Ferroelectric ternary content-addressable memory for one-shot learning
K Ni, X Yin, AF Laguna, S Joshi, S Dünkel, M Trentzsch, J Müller, S Beyer, ...
Nature Electronics 2 (11), 521-529, 2019
1202019
A circuit compatible accurate compact model for ferroelectric-FETs
K Ni, M Jerry, JA Smith, S Datta
2018 IEEE Symposium on VLSI Technology, 131-132, 2018
1032018
A ferroelectric field effect transistor based synaptic weight cell
M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ...
Journal of Physics D: Applied Physics 51 (43), 434001, 2018
892018
SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
732018
Time-resolved measurement of negative capacitance
P Sharma, J Zhang, K Ni, S Datta
IEEE Electron Device Letters 39 (2), 272-275, 2017
732017
Exploiting hybrid precision for training and inference: A 2T-1FeFET based analog synaptic weight cell
X Sun, P Wang, K Ni, S Datta, S Yu
2018 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2018
692018
Computing with ferroelectric FETs: Devices, models, systems, and applications
A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
622018
An ultra-dense 2FeFET TCAM design based on a multi-domain FeFET model
X Yin, K Ni, D Reis, S Datta, M Niemier, XS Hu
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (9), 1577-1581, 2018
532018
Write disturb in ferroelectric FETs and its implication for 1T-FeFET AND memory arrays
K Ni, X Li, JA Smith, M Jerry, S Datta
IEEE Electron Device Letters 39 (11), 1656-1659, 2018
472018
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO
AK Saha, K Ni, S Dutta, S Datta, S Gupta
Applied Physics Letters 114 (20), 202903, 2019
422019
Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs
K Ni, W Chakraborty, J Smith, B Grisafe, S Datta
2019 Symposium on VLSI Technology, T40-T41, 2019
402019
Bias dependence of single-event upsets in 16 nm FinFET D-flip-flops
B Narasimham, S Hatami, A Anvar, DM Harris, A Lin, JK Wang, ...
IEEE Transactions on Nuclear Science 62 (6), 2578-2584, 2015
392015
Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array
D Reis, K Ni, W Chakraborty, X Yin, M Trentzsch, SD Dünkel, T Melde, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
372019
In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology
K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018
332018
FeCAM: A universal compact digital and analog content addressable memory using ferroelectric
X Yin, C Li, Q Huang, L Zhang, M Niemier, XS Hu, C Zhuo, K Ni
IEEE Transactions on Electron Devices 67 (7), 2785-2792, 2020
322020
Supervised learning in all fefet-based spiking neural network: Opportunities and challenges
S Dutta, C Schafer, J Gomez, K Ni, S Joshi, S Datta
Frontiers in Neuroscience 14, 634, 2020
302020
Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies
H Zhang, H Jiang, TR Assis, DR Ball, K Ni, JS Kauppila, RD Schrimpf, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 5C-3-1-5C-3-5, 2016
302016
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